Pulse diodes
156
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5-7 days, 85008 pcs.
Brand: Diotec
Material: silicon
Number of diodes in the case: 1
Diode configuration: Single
Maximum constant reverse voltage, V: 75
Maximum pulse reverse voltage, V: 100
Maximum forward (rectified for half-cycle) current, A: 0.2
Maximum permissible direct impulse current, A: 0.5
Maximum reverse current, uA 25g: 5
Maximum forward voltage, V: 1
at Ipr., A: 0.01
Maximum reverse recovery time, ns: 4
Total capacitance SD, pF: 4
Working temperature, C: -50…+175
Mounting method: in hole
Housing: DO-35
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5-7 days, 85008 pcs. |
13 ֏
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8 ֏ from 100 pcs. — 7 ֏
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5-7 days, 9360 pcs.
Brand: Nexperia
Material: silicon
Number of diodes in the case: 1
Diode configuration: Single
Maximum constant reverse voltage, V: 100
Maximum pulse reverse voltage, V: 100
Maximum forward (rectified for half-cycle) current, A: 0.2
Maximum permissible direct impulse current, A: 0.45
Maximum reverse current, uA 25g: 50
Maximum forward voltage, V: 1
at Ipr., A: 0.01
Maximum reverse recovery time, ns: 4
Total capacitance SD, pF: 4
Working temperature, C: -65…+200
Mounting method: in hole
Housing: DO-35
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5-7 days, 9360 pcs. |
19 ֏
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14 ֏ from 100 pcs. — 11 ֏
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Brand: Vishay
Material: silicon
Number of diodes in the case: 1
Diode configuration: Single
Maximum constant reverse voltage, V: 75
Maximum pulse reverse voltage, V: 100
Maximum forward (rectified for half-cycle) current, A: 0.15
Maximum permissible direct impulse current, A: 0.5
Maximum reverse current, uA 25g: 5
Maximum forward voltage, V: 1
at Ipr., A: 0.01
Maximum reverse recovery time, ns: 4
Total capacitance SD, pF: 4
Working temperature, C: -65…+150
Mounting method: in hole
Housing: DO-35
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25 ֏
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18 ֏ from 100 pcs. — 16 ֏
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Brand: ON Semiconductor
Material: silicon
Number of diodes in the case: 1
Diode configuration: Single
Maximum constant reverse voltage, V: 75
Maximum pulse reverse voltage, V: 100
Maximum forward (rectified for half-cycle) current, A: 0.2
Maximum permissible direct impulse current, A: 0.4
Maximum reverse current, uA 25g: 5
Maximum forward voltage, V: 1
at Ipr., A: 0.01
Maximum reverse recovery time, ns: 4
Total capacitance SD, pF: 4
Working temperature, C: -55…+175
Mounting method: in hole
Housing: DO-35
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13 ֏
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6 ֏ |
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5-7 days, 4460 pcs.
Brand: SUNMATE
Material: silicon
Number of diodes in the case: 1
Diode configuration: Single
Maximum constant reverse voltage, V: 75
Maximum pulse reverse voltage, V: 100
Maximum forward (rectified for half-cycle) current, A: 0.15
Maximum permissible direct impulse current, A: 0.3
Maximum reverse current, uA 25g: 1
Maximum forward voltage, V: 1.25
at Ipr., A: 0.15
Maximum reverse recovery time, ns: 4
Total capacitance SD, pF: 2
Working temperature, C: -55…+150
Mounting method: smd
Housing: SOD-123
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5-7 days, 4460 pcs. |
7 ֏
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from 3000 pcs. — 5 ֏
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5-7 days, 17751 pcs.
Brand: Diotec
Material: silicon
Number of diodes in the case: 1
Diode configuration: Single
Maximum constant reverse voltage, V: 75
Maximum pulse reverse voltage, V: 100
Maximum forward (rectified for half-cycle) current, A: 0.15
Maximum permissible direct impulse current, A: 0.3
Maximum reverse current, uA 25g: 1
Maximum forward voltage, V: 1.25
at Ipr., A: 0.15
Maximum reverse recovery time, ns: 4
Total capacitance SD, pF: 2
Working temperature, C: -55…+150
Mounting method: smd
Housing: SOD-123F
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5-7 days, 17751 pcs. |
13 ֏
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10 ֏ |
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5-7 days, 16225 pcs.
Brand: Diotec
Material: silicon
Number of diodes in the case: 1
Diode configuration: Single
Maximum constant reverse voltage, V: 75
Maximum pulse reverse voltage, V: 100
Maximum forward (rectified for half-cycle) current, A: 0.15
Maximum permissible direct impulse current, A: 0.3
Maximum reverse current, uA 25g: 1
Maximum forward voltage, V: 1.25
at Ipr., A: 0.15
Maximum reverse recovery time, ns: 4
Total capacitance SD, pF: 2
Working temperature, C: -55…+150
Mounting method: smd
Housing: SOD-323F
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5-7 days, 16225 pcs. |
19 ֏
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12 ֏ from 100 pcs. — 10 ֏
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Brand: ON Semiconductor
Material: silicon
Number of diodes in the case: 1
Diode configuration: Single
Maximum constant reverse voltage, V: 75
Maximum pulse reverse voltage, V: 100
Maximum forward (rectified for half-cycle) current, A: 0.15
Maximum permissible direct impulse current, A: 0.3
Maximum reverse current, uA 25g: 5
Maximum forward voltage, V: 1
at Ipr., A: 0.01
Maximum reverse recovery time, ns: 4
Total capacitance SD, pF: 4
Working temperature, C: -55…+150
Mounting method: smd
Housing: SOD-323F
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55 ֏
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38 ֏ from 100 pcs. — 33 ֏
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5-7 days, 10449 pcs.
Brand: Diotec
Material: silicon
Number of diodes in the case: 1
Diode configuration: Single
Maximum constant reverse voltage, V: 75
Maximum pulse reverse voltage, V: 100
Maximum forward (rectified for half-cycle) current, A: 0.2
Maximum permissible direct impulse current, A: 0.5
Maximum reverse current, uA 25g: 5
Maximum forward voltage, V: 1
at Ipr., A: 0.1
Maximum reverse recovery time, ns: 4
Total capacitance SD, pF: 4
Working temperature, C: -50…+175
Mounting method: in hole
Housing: DO-35
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5-7 days, 10449 pcs. |
19 ֏
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10 ֏ from 100 pcs. — 9 ֏
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5-7 days, 5949 pcs.
Brand: Diotec
Material: silicon
Number of diodes in the case: 1
Diode configuration: Single
Maximum constant reverse voltage, V: 75
Maximum pulse reverse voltage, V: 100
Maximum forward (rectified for half-cycle) current, A: 0.15
Maximum permissible direct impulse current, A: 0.3
Maximum reverse current, uA 25g: 5
Maximum forward voltage, V: 1
at Ipr., A: 0.1
Maximum reverse recovery time, ns: 4
Total capacitance SD, pF: 4
Working temperature, C: -55…+150
Mounting method: smd
Housing: SOD-123
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quick view |
5-7 days, 5949 pcs. |
19 ֏
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13 ֏ from 100 pcs. — 11 ֏
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Brand: ON Semiconductor
Material: silicon
Number of diodes in the case: 1
Diode configuration: Single
Maximum constant reverse voltage, V: 75
Maximum pulse reverse voltage, V: 100
Maximum forward (rectified for half-cycle) current, A: 0.15
Maximum permissible direct impulse current, A: 0.3
Maximum reverse current, uA 25g: 5
Maximum forward voltage, V: 1
at Ipr., A: 0.1
Maximum reverse recovery time, ns: 4
Total capacitance SD, pF: 4
Working temperature, C: -55…+150
Mounting method: smd
Housing: SOD-323F
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43 ֏
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29 ֏ from 100 pcs. — 26 ֏
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Brand: ON Semiconductor
Material: silicon
Number of diodes in the case: 1
Diode configuration: Single
Maximum constant reverse voltage, V: 75
Maximum pulse reverse voltage, V: 100
Maximum forward (rectified for half-cycle) current, A: 0.2
Maximum permissible direct impulse current, A: 0.4
Maximum reverse current, uA 25g: 5
Maximum forward voltage, V: 1
at Ipr., A: 0.01
Maximum reverse recovery time, ns: 4
Total capacitance SD, pF: 4
Working temperature, C: -55…+175
Mounting method: in hole
Housing: DO-35
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quick view |
37 ֏
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26 ֏ from 100 pcs. — 23 ֏
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Brand: ON Semiconductor
Material: silicon
Number of diodes in the case: 1
Diode configuration: Single
Maximum constant reverse voltage, V: 75
Maximum pulse reverse voltage, V: 100
Maximum forward (rectified for half-cycle) current, A: 0.15
Maximum permissible direct impulse current, A: 0.4
Maximum reverse current, uA 25g: 5
Maximum forward voltage, V: 1
at Ipr., A: 0.01
Maximum reverse recovery time, ns: 4
Total capacitance SD, pF: 4
Working temperature, C: -55…+175
Mounting method: smd
Housing: SOD-323F
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19 ֏
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13 ֏ from 100 pcs. — 11 ֏
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5-7 days, 947 pcs.
Brand: Nexperia
Material: silicon
Number of diodes in the case: 2
Diode configuration: 1-pair, serial connection
Maximum constant reverse voltage, V: 80
Maximum pulse reverse voltage, V: 85
Maximum forward (rectified for half-cycle) current, A: 0.2
Maximum permissible direct impulse current, A: 0.5
Maximum reverse current, uA 25g: 0.5
Maximum forward voltage, V: 1.2
at Ipr., A: 0.1
Maximum reverse recovery time, ns: 4
Total capacitance SD, pF: 1.5
Working temperature, C: -65…+150
Mounting method: smd
Housing: SOD-323
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5-7 days, 947 pcs. |
49 ֏
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33 ֏ from 100 pcs. — 29 ֏
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5-7 days, 2990 pcs. |
9 ֏
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from 100 pcs. — 7 ֏
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5-7 days, 2880 pcs. |
12 ֏
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from 100 pcs. — 9 ֏
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5-7 days, 3203 pcs.
Brand: Nexperia
Material: silicon
Number of diodes in the case: 1
Diode configuration: Single
Maximum constant reverse voltage, V: 100
Maximum pulse reverse voltage, V: 100
Maximum forward (rectified for half-cycle) current, A: 0.215
Maximum permissible direct impulse current, A: 0.5
Maximum reverse current, uA 25g: 0.5
Maximum forward voltage, V: 1.25
at Ipr., A: 0.15
Maximum reverse recovery time, ns: 4
Total capacitance SD, pF: 1.5
Working temperature, C: -65…+150
Mounting method: smd
Housing: SOT-23-3
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5-7 days, 3203 pcs. |
73 ֏
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28 ֏ from 100 pcs. — 23 ֏
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Brand: Infineon
Material: silicon
Number of diodes in the case: 1
Diode configuration: Single
Maximum constant reverse voltage, V: 80
Maximum pulse reverse voltage, V: 85
Maximum forward (rectified for half-cycle) current, A: 0.25
Maximum reverse current, uA 25g: 1
Maximum forward voltage, V: 1.25
at Ipr., A: 0.15
Maximum reverse recovery time, ns: 6
Total capacitance SD, pF: 2
Working temperature, C: -65…+150
Mounting method: smd
Housing: SOT-23-3
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79 ֏
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52 ֏ from 100 pcs. — 40 ֏
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Brand: ON Semiconductor
Material: silicon
Number of diodes in the case: 1
Diode configuration: Single
Maximum constant reverse voltage, V: 100
Maximum forward (rectified for half-cycle) current, A: 0.2
Maximum reverse current, uA 25g: 30
Maximum forward voltage, V: 1.25
at Ipr., A: 0.15
Maximum reverse recovery time, ns: 6
Total capacitance SD, pF: 2
Working temperature, C: -55…+150
Mounting method: smd
Housing: SOD-323
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29 ֏
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from 100 pcs. — 25 ֏
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5-7 days, 4919 pcs.
Brand: Nexperia
Material: silicon
Number of diodes in the case: 1
Diode configuration: Single
Maximum constant reverse voltage, V: 100
Maximum forward (rectified for half-cycle) current, A: 0.25
Maximum permissible direct impulse current, A: 0.5
Maximum reverse current, uA 25g: 0.5
Maximum forward voltage, V: 1.25
at Ipr., A: 0.15
Maximum reverse recovery time, ns: 4
Total capacitance SD, pF: 1.5
Working temperature, C: -65…+150
Mounting method: smd
Housing: SOD-323F
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quick view |
5-7 days, 4919 pcs. |
273 ֏
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203 ֏ from 100 pcs. — 194 ֏
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Pulse diodes are semiconductor radio components designed for high-frequency pulse circuits.
They are pn-junction semiconductor diodes optimized for capacitance and reverse resistance recovery time (minority carrier dissipation). To do this, the pn-junction area is reduced, and heavily doped materials are used in the manufacture (silicon is alloyed with gold), due to which pulsed diodes have low limiting pulse currents (hundreds of mA) and a small limiting reverse voltage (tens of volts).
You can receive an order at our office and pick-up point in Yerevan. Delivery of goods is carried out throughout Armenia by courier and Haypost.
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Products from the group «Pulse diodes» you can buy wholesale and retail.