BSP149H6327XTSA1, Transistor N-MOSFET 200V 660mA [SOT-223]

Photo 1/5 BSP149H6327XTSA1, Transistor N-MOSFET 200V 660mA [SOT-223]
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see technical documentation
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398 ֏
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SKU: 9001036255
Brand / Manufacturer: INFINEON TECHNOLOGIES AG.

Description

MOSFET N-Ch 200V 660mA SOT-223-3

Technical parameters

Structure n-channel
Maximum drain-source voltage Usi, V 200
Maximum drain-source current at 25 C Isi max..A 0.66
Maximum gate-source voltage Uzi max., V 20
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on) 1.7ohm/0.07A/0V
Maximum power dissipation Psi max..W 1.8
Slope of characteristic, S 0.8
Housing SOT-223
Weight, g 0.2

Technical documentation

BSP149
pdf, 396 КБ
Datasheet
pdf, 402 КБ