FDN337N, Transistor N-channel 30V 2.2A [SOT-23-3]

FDN337N, Transistor N-channel 30V 2.2A [SOT-23-3]
Images are for reference only,
see technical documentation
SKU
9000982591
Brand
Structure
N-channel
Housing
SOT-23-3
Weight, g
0.05
All parameters
FDN337N
pdf, 140 КБ
14735 pcs. from the central warehouse, term 9 days
37 ֏
35 ֏
from 5 pcs.32 ֏
1 pcs. amount of 35 ֏
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Description

Transistors and MOSFET assemblies

Technical parameters

Structure N-channel
Maximum drain-source voltage Usi, V 30
Maximum drain-source current at 25 C Isi max..A 2.2
Maximum gate-source voltage Uzi max., V ±8
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on) 0.065 Ohm / 2.2A, 4.5V
Maximum power dissipation Psi max..W 0.5
Housing SOT-23-3
Weight, g 0.05

Technical documentation

FDN337N
pdf, 140 КБ

Delivery terms

Delivery to Yerevan

Office CHIP AND DIP 28 April1 free
HayPost 2 May1 1 650 ֏2
1 estimated delivery date depends on the date of payment or order confirmation
2 for parcels weighing up to 1 kg