FDN337N, Transistor N-channel 30V 2.2A [SOT-23-3]
![FDN337N, Transistor N-channel 30V 2.2A [SOT-23-3]](https://static.chipdip.ru/lib/255/DOC005255375.jpg)
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see technical documentation
see technical documentation
SKU
9000982591
Brand
Structure
N-channel
Housing
SOT-23-3
Weight, g
0.05
All parameters
FDN337N
pdf, 140 КБ
14735 pcs. from the central warehouse, term 9 days
37 ֏
35 ֏
from 5 pcs. —
32 ֏
1 pcs.
amount of 35 ֏
Alternative offers1
The same product with different prices and delivery dates
Description
Transistors and MOSFET assemblies
Technical parameters
Structure | N-channel | |
Maximum drain-source voltage Usi, V | 30 | |
Maximum drain-source current at 25 C Isi max..A | 2.2 | |
Maximum gate-source voltage Uzi max., V | ±8 | |
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on) | 0.065 Ohm / 2.2A, 4.5V | |
Maximum power dissipation Psi max..W | 0.5 | |
Housing | SOT-23-3 | |
Weight, g | 0.05 |
Technical documentation
FDN337N
pdf, 140 КБ
Delivery terms
Delivery to Yerevan
Office CHIP AND DIP | 28 April1 | free |
HayPost | 2 May1 | 1 650 ֏2 |
1 estimated delivery date depends on the date of payment or order confirmation
2 for parcels weighing up to 1 kg