IRF7105TRPBF, TrenchFET N/P Channels 30V 6.8A/-6.6A [SOIC-8]
![IRF7105TRPBF, TrenchFET N/P Channels 30V 6.8A/-6.6A [SOIC-8]](https://static.chipdip.ru/lib/304/DOC005304627.jpg)
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see technical documentation
see technical documentation
2904 pcs. from the central warehouse, term 5-7 working days
346 ֏
214 ֏
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198 ֏
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Technical parameters
| Structure | N / P channels | |
| Maximum drain-source voltage Usi, V | 30 | |
| Maximum drain-source current at 25 C Isi max..A | 8/6.8 | |
| Maximum gate-source voltage Uzi max., V | 20 | |
| Channel resistance in open state Rsi incl. (Max) at Id, Rds (on) | 0.018 ohm/6.8A, 10V/0.044 ohm/6.5A, 8V | |
| Maximum power dissipation Psi max..W | 3.1 | |
| Slope of characteristic, S | 27/25 | |
| Housing | soic-8 | |
| Weight, g | 0.15 | |
Technical documentation
Datasheet IRF7105TRPBF
pdf, 612 КБ
Delivery terms
Delivery to Yerevan
| Office CHIP AND DIP | 10 October1 | free |
| HayPost | 13 October1 | 1 650 ֏2 |
1 estimated delivery date depends on the date of payment or order confirmation
2 for parcels weighing up to 1 kg
