IRF7341TRPBF, Transistor, 2N-channel 55V 4.7A [SO-8]

Photo 1/5 IRF7341TRPBF, Transistor, 2N-channel 55V 4.7A [SO-8]
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see technical documentation
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SKU: 9000541463

Description

Description The IRF7341TRPBF field effect transistor from the manufacturer INFINEON is a high-quality component designed for use in a wide variety of electronic devices. The N-MOSFET transistor provides a drain current of up to 4.7 A and is able to withstand a drain-source voltage of up to 55 V, while its power is 2 W. Efficient and reliable, this transistor is made in a compact SO8 housing suitable for SMD mounting, which makes it an ideal choice for surface mounting on printed circuit boards. The IRF7341TRPBF model is characterized by stable performance and long service life, which makes it the preferred solution for developers and engineers. Use IRF7341TRPBF to create efficient and reliable electronic circuits. Specifications
Category Transistor
Type field
View N-MOSFET
Mounting SMD
Drain current, A 4.7
Drain-source voltage, V 55
Power, W 2
Body SO8

Technical parameters

Structure 2N channels
Maximum drain-source voltage Usi, V 55
Maximum drain-source current at 25 C Isi max..A 4.7
Maximum gate-source voltage Uzi max., V ±20
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on) 0.05 ohm/4.7A, 10V
Maximum power dissipation Psi max..W 2
Slope of characteristic, S 7.9
Housing SOIC-8
Weight, g 0.15

Technical documentation

Datasheet IRF7341
pdf, 158 КБ