IRF7341TRPBF-VB, 2N-channel 60V 7A TrenchFET Transistor [SOIC-8]

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see technical documentation

SKU

9000980584

Brand

Structure

2N channels

Slope of characteristic, S

Housing

SOIC-8

Weight, g

0.15

All parameters

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4934 pcs. from the central warehouse, term 9 days

485 ֏

374 ֏

from 50 pcs. — 357 ֏

1 pcs. amount of 374 ֏

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Description of MOSFET Transistor

Structure	2N channels
Maximum drain-source voltage Usi, V	60
Maximum drain-source current at 25 C Isi max..A	7
Maximum gate-source voltage Uzi max., V	±20
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on)	0.028 ohm/4.5A, 10V
Maximum power dissipation Psi max..W	4
Slope of characteristic, S	15
Housing	SOIC-8
Weight, g	0.15