IRF7351TRPBF, Transistor HEXFET, 2N-channel 60V 8A [SO-8]

Photo 1/5 IRF7351TRPBF, Transistor HEXFET, 2N-channel 60V 8A [SO-8]
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see technical documentation
1 880 ֏
1 250 ֏
from 25 pcs.1 220 ֏
Add to Shopping Cart 1 pcs. amount of 1 250 ֏
SKU: 9000547574

Description

Description The IRF7351TRPBF field effect transistor from the famous manufacturer INFINEON is a high-quality component for modern electronics. Due to the SMD mounting, this transistor is ideal for surface mounting on printed circuit boards. With a drain current of up to 8 A and a drain-source voltage of 60 V, it provides reliable operation in a wide range of electrical circuits. The power of the transistor is 2 watts, which makes it powerful enough for most tasks. The N-MOSFET type indicates the use of an N-channel metal oxide field effect transistor, which is the industry standard for high-efficiency switching devices. The SO8 case provides compactness and space saving on the board. By purchasing IRF7351TRPBF, you get a reliable component for your electronic projects. Specifications
Category Transistor
Type field
View N-MOSFET
Mounting SMD
Drain current, A 8
Drain-source voltage, V 60
Power, W 2
Body SO8

Technical parameters

Structure 2N channels
Maximum drain-source voltage Usi, V 60
Maximum drain-source current at 25 C Isi max..A 8
Maximum gate-source voltage Uzi max., V ±20
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on) 0.0178 Ohm/8A, 10V
Maximum power dissipation Psi max..W 2
Slope of characteristic, S 18
Housing SOIC-8
Weight, g 0.15

Technical documentation

Documentation
pdf, 285 КБ
Datasheet IRF7351
pdf, 282 КБ