IRLR2905TR, Transistor TrenchFET N-channel 60V 35A [DPAK / TO-252]
![IRLR2905TR, Transistor TrenchFET N-channel 60V 35A [DPAK / TO-252]](https://static.chipdip.ru/lib/294/DOC005294472.jpg)
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see technical documentation
see technical documentation
2413 pcs. from the central warehouse, term 5-7 working days
425 ֏
265 ֏
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Technical parameters
| Structure | n-channel | |
| Maximum drain-source voltage Usi, V | 55 | |
| Maximum drain-source current at 25 C Isi max..A | 42 | |
| Maximum gate-source voltage Uzi max., V | 16 | |
| Channel resistance in open state Rsi incl. (Max) at Id, Rds (on) | 0.027 Ohm / 25A, 10V | |
| Maximum power dissipation Psi max..W | 110 | |
| Slope of characteristic, S | 21 | |
| Housing | DPAK(2 Leads+Tab) | |
| Weight, g | 0.43 | |
Technical documentation
Datasheet IRLR2905TR
pdf, 797 КБ
Delivery terms
Delivery to Yerevan
| Office CHIP AND DIP | 10 October1 | free |
| HayPost | 13 October1 | 1 650 ֏2 |
1 estimated delivery date depends on the date of payment or order confirmation
2 for parcels weighing up to 1 kg
