CSD18502KCS, Транзистор: N-MOSFET, полевой, 40В, 100А, 259Вт, TO220-3
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Описание
Описание Транзистор: N-MOSFET, полевой, 40В, 100А, 259Вт, TO220-3 Характеристики
| Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Brand: | Texas Instruments |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 350 |
| Fall Time: | 9.3 ns |
| Forward Transconductance - Min: | 138 S |
| Id - Continuous Drain Current: | 212 A |
| Manufacturer: | Texas Instruments |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-220-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 259 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 52 nC |
| Rds On - Drain-Source Resistance: | 2.9 mOhms |
| Rise Time: | 7.3 ns |
| Series: | CSD18502KCS |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | NexFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 33 ns |
| Typical Turn-On Delay Time: | 11 ns |
| Vds - Drain-Source Breakdown Voltage: | 40 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.5 V |
| Вес, г | 1.98 |