SIRA80DP-T1-RE3, MOSFET 30V Vds 20/-16V Vgs PowerPAK SO-8
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
1 980 ֏
от 10 шт. —
1 560 ֏
от 100 шт. —
1 170 ֏
от 250 шт. —
1 000 ֏
Добавить в корзину 1 шт.
на сумму 1 980 ֏
Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
TrenchFET® Gen IV MOSFETs Vishay / Siliconix TrenchFET® Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high-power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switches.
Технические параметры
| Brand: | Vishay Semiconductors |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: | 3000 |
| Fall Time: | 12 ns |
| Id - Continuous Drain Current: | 100 A |
| Manufacturer: | Vishay |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | PowerPAK-SO-8 |
| Pd - Power Dissipation: | 104 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 125 nC |
| Rds On - Drain-Source Resistance: | 620 uOhms |
| Rise Time: | 23 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Typical Turn-Off Delay Time: | 41 ns |
| Typical Turn-On Delay Time: | 17 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -16 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.2 V |
| Channel Mode | Enhancement |
| Continuous Drain Current | 100(A) |
| Drain-Source On-Volt | 30(V) |
| Gate-Source Voltage (Max) | 20/-16(V) |
| Mounting | Surface Mount |
| Number of Elements | 1 |
| Operating Temp Range | -55C to 150C |
| Operating Temperature Classification | Military |
| Package Type | POWERPAK SO EP |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Polarity | N |
| Power Dissipation | 6.25(W) |
| Rad Hardened | No |
| Type | Power MOSFET |
| Вес, г | 0.51 |
Техническая документация
Datasheet
pdf, 314 КБ
Документация
pdf, 287 КБ
Трёхмерное изображение изделия
pdf, 70 КБ
Трёхмерное изображение изделия
zip, 56 КБ
