AS6C4016-55ZIN
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Описание
Электроэлемент
Описание IC: SRAM memory; 256kx16bit; 2.7?5.5V; 55ns; TSOP44 II; parallel Характеристики Категория | Микросхема |
Тип | памяти |
Вид | SRAM |
Технические параметры
Access Time | 55 ns |
Brand | Alliance Memory |
Factory Pack Quantity | 135 |
Interface Type | Parallel |
Manufacturer | Alliance Memory |
Maximum Operating Temperature | +85 C |
Memory Size | 4 Mbit |
Memory Type | SDR |
Minimum Operating Temperature | -40 C |
Mounting Style | SMD/SMT |
Operating Temperature Range | -40 C to+85 C |
Organization | 256 k x 16 |
Package / Case | TSOP II-44 |
Packaging | Tray |
Product Category | SRAM |
RoHS | Details |
Series | AS6C4016 |
Supply Current - Max | 60 mA |
Supply Voltage - Max | 5.5 V |
Supply Voltage - Min | 2.7 V |
Type | Asynchronous |
ECCN | 3A991B2A |
HTSUS | 8542.32.0041 |
Memory Format | SRAM |
Memory Interface | Parallel |
Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
Mounting Type | Surface Mount |
Operating Temperature | -40В°C ~ 85В°C (TA) |
Package | Tray |
REACH Status | REACH Unaffected |
RoHS Status | ROHS3 Compliant |
Supplier Device Package | 44-TSOP II |
Technology | SRAM - Asynchronous |
Voltage - Supply | 2.7V ~ 5.5V |
Write Cycle Time - Word, Page | 55ns |
Address Bus Width | 18bit |
Low Power | Yes |
Maximum Operating Supply Voltage | 5.5 V |
Maximum Random Access Time | 55ns |
Minimum Operating Supply Voltage | 2.7 V |
Number of Bits per Word | 16bit |
Number of Words | 256k |
Organisation | 256k x 16 bit |
Package Type | TSOP |
Pin Count | 44 |
Timing Type | Asynchronous |
Width | 10.3mm |
Вес, г | 4.571 |
Техническая документация
Datasheet AS6C4016-55ZIN
pdf, 629 КБ
Datasheet AS6C4016-55ZIN
pdf, 601 КБ
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