VBUS05L1-DD1-G-08
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см. техническую документацию
см. техническую документацию
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Описание
Electrostatic discharge (ESD) protection according to IEC 61000 standards
Технические параметры
| Breakdown voltage | 8.4V |
| Case | LLP1006-2 |
| Features of semiconductor devices | ESD protection |
| Kind of package | reel, tape |
| Manufacturer | VISHAY |
| Max. forward impulse current | 2A |
| Max. off-state voltage | 5.5V |
| Mounting | SMD |
| Peak pulse power dissipation | 34W |
| Semiconductor structure | bidirectional |
| Technology | TransZorb® |
| Type of diode | TVS |
| Capacitance | 0.4pF |
| Diode Configuration | Dual |
| Direction Type | Bi-Directional |
| ESD Protection | Yes |
| Maximum Clamping Voltage | 14V |
| Maximum Operating Temperature | +125 °C |
| Maximum Peak Pulse Current | 2A |
| Maximum Reverse Leakage Current | 50nA |
| Maximum Reverse Stand-off Voltage | 5.5V |
| Minimum Breakdown Voltage | 7V |
| Minimum Operating Temperature | -40 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 2 |
| Package Type | LLP1006 |
| Pin Count | 2 |
| Test Current | 1mA |
| Width | 0.65mm |
