AS4C128M16D3LC-12BIN, IC: DRAM memory; 128Mx16bit; 1.35V; 800MHz; 13.75ns; FBGA96

DDR3 Synchronous DRAM

Alliance Memory DDR3 Synchronous DRAM (SDRAM) achieves high-speed double-data-rate transfer rates of up to 1600Mb/sec/pin for general applications. The chip is designed to comply with all key DDR3 DRAM key features and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK# falling). All I/Os are synchronized with differential DQS pairs in a source synchronous fashion. These devices operate with a single 1.5V ± 0.075V power supply and are available in BGA packages.