STB28NM50N
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см. техническую документацию
см. техническую документацию
14 шт. с центрального склада, срок 3 недели
7 600 ֏
от 2 шт. —
7 000 ֏
от 5 шт. —
6 600 ֏
от 10 шт. —
6 300 ֏
Добавить в корзину 1 шт.
на сумму 7 600 ֏
Альтернативные предложения2
Описание
Электроэлемент
:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Stmicroelectronics STB28NM50N
Технические параметры
| Brand | STMicroelectronics |
| Configuration | Single |
| Factory Pack Quantity | 1000 |
| Fall Time | 52 ns |
| Id - Continuous Drain Current | 21 A |
| Manufacturer | STMicroelectronics |
| Maximum Operating Temperature | +150 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | TO-263-3 |
| Packaging | Reel |
| Pd - Power Dissipation | 150 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 50 nC |
| Rds On - Drain-Source Resistance | 158 mOhms |
| Rise Time | 19 ns |
| RoHS | Details |
| Series | N-channel MDmesh |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Type | N-Channel MDmesh II Power MOSFET |
| Typical Turn-Off Delay Time | 62 ns |
| Typical Turn-On Delay Time | 13.6 ns |
| Unit Weight | 0.139332 oz |
| Vds - Drain-Source Breakdown Voltage | 500 V |
| Vgs - Gate-Source Voltage | +/-25 V |
| Vgs th - Gate-Source Threshold Voltage | 4 V |
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Fall Time: | 52 ns |
| Id - Continuous Drain Current: | 21 A |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | D2PAK-3(TO-263-3) |
| Pd - Power Dissipation: | 150 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 50 nC |
| Rds On - Drain-Source Resistance: | 158 mOhms |
| Rise Time: | 19 ns |
| Series: | STB28NM50N |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | MDmesh |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Type: | N-Channel MDmesh II Power MOSFET |
| Typical Turn-Off Delay Time: | 62 ns |
| Typical Turn-On Delay Time: | 13.6 ns |
| Vds - Drain-Source Breakdown Voltage: | 500 V |
| Vgs - Gate-Source Voltage: | -25 V, +25 V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Вес, г | 1.592 |
Техническая документация
Datasheet
pdf, 960 КБ
Datasheet
pdf, 945 КБ
STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N
pdf, 960 КБ
Сроки доставки
Доставка в регион Ереван
| Офис «ЧИП и ДИП» | 3 июля1 | бесплатно |
| HayPost | 7 июля1 | 1 650 ֏2 |
1 ориентировочно, дата доставки зависит от даты оплаты или подтверждения заказа
2 для посылок массой до 1 кг