FCB070N65S3
8 400 ֏
от 2 шт. —
7 800 ֏
от 5 шт. —
7 400 ֏
от 8 шт. —
7 100 ֏
Добавить в корзину 1 шт.
на сумму 8 400 ֏
Описание
Электроэлемент
N-Channel Power MOSFET, SUPERFET® III, Easy Drive, 650 V, 44 A, 70 mΩ, D2PAK
Технические параметры
| Current - Continuous Drain (Id) @ 25В°C | 44A(Tc) |
| Drain to Source Voltage (Vdss) | 650V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 78nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 3090pF @ 400V |
| Manufacturer | ON Semiconductor |
| Mounting Type | Surface Mount |
| Operating Temperature | -55В°C ~ 150В°C(TJ) |
| Package / Case | TO-263-3, DВІPak(2 Leads+Tab), TO-263AB |
| Packaging | Cut Tape(CT) |
| Part Status | Active |
| Power Dissipation (Max) | 312W(Tc) |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 22A, 10V |
| Series | SuperFETВ® III |
| Supplier Device Package | DВІPAK(TO-263AB) |
| Technology | MOSFET(Metal Oxide) |
| Vgs (Max) | В±30V |
| Vgs(th) (Max) @ Id | 4.5V @ 4.4mA |
| Вес, г | 1.312 |
Техническая документация
Документация
pdf, 309 КБ