BSP52G
530 ֏
Мин. кол-во для заказа 2 шт.
от 5 шт. —
267 ֏
от 10 шт. —
184 ֏
от 100 шт. —
110 ֏
Добавить в корзину 2 шт.
на сумму 1 060 ֏
Описание
Электроэлемент
TRANSISTOR, NPN, 80V, 1A, SOT-223-4; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:-; Power Dissipation Pd:800mW; DC Collector Current:1A; DC Current Gain hFE:1000hFE; Transisto
Технические параметры
| Brand | ON Semiconductor |
| Collector- Base Voltage VCBO | 90 V |
| Collector- Emitter Voltage VCEO Max | 80 V |
| Configuration | Single |
| Continuous Collector Current | 1 mAdc |
| DC Collector/Base Gain hfe Min | 1000, 2000 |
| Emitter- Base Voltage VEBO | 5 V |
| Factory Pack Quantity | 4000 |
| Height | 1.57 mm |
| Length | 6.5 mm |
| Manufacturer | ON Semiconductor |
| Maximum Collector Cut-off Current | 10 uA |
| Maximum DC Collector Current | 1 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -65 C |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-23(Pb-Free) |
| Packaging | Reel |
| Pd - Power Dissipation | 6.4 mW |
| Product Category | Darlington Transistors |
| RoHS | Details |
| Series | BSP52 |
| Transistor Polarity | NPN |
| Unit Weight | 0.000282 oz |
| Width | 3.5 mm |
| Вес, г | 0.2323 |
Техническая документация
Документация
pdf, 270 КБ