BVSS138LG
482 ֏
Мин. кол-во для заказа 2 шт.
от 5 шт. —
237 ֏
от 10 шт. —
162 ֏
от 100 шт. —
94 ֏
Добавить в корзину 2 шт.
на сумму 964 ֏
Описание
Электроэлемент
MOSFET, N-CH, 50V, 0.2A, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:200mA; Drain Source Voltage Vds:50V; On Resistance Rds(on):3.5ohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs:1.5V; Powe
Технические параметры
Brand | ON Semiconductor |
Configuration | Single |
Factory Pack Quantity | 3000 |
Forward Transconductance - Min | 100 mS |
Id - Continuous Drain Current | 200 mA |
Manufacturer | ON Semiconductor |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Mounting Style | SMD/SMT |
Number of Channels | 1 Channel |
Package / Case | SOT-23-3 |
Packaging | Cut Tape |
Pd - Power Dissipation | 225 mW |
Product Category | MOSFET |
Rds On - Drain-Source Resistance | 5.6 Ohms |
RoHS | Details |
Series | BSS138L |
Technology | Si |
Transistor Polarity | N-Channel |
Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 20 ns |
Typical Turn-On Delay Time | 20 ns |
Unit Weight | 0.000282 oz |
Vds - Drain-Source Breakdown Voltage | 50 V |
Vgs - Gate-Source Voltage | 20 V |
Vgs th - Gate-Source Threshold Voltage | 1.5 V |
Вес, г | 0.03 |
Техническая документация
Datasheet BSS138L
pdf, 109 КБ