IPW65R050CFD7AXKSA1
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Описание
Электроэлемент
Mosfet, N-Ch, 650V, 45A, To-247 Rohs Compliant: Yes |Infineon IPW65R050CFD7AXKSA1
Технические параметры
| Brand: | Infineon Technologies |
| Channel Mode: | Enhancement |
| Factory Pack Quantity: | 240 |
| Id - Continuous Drain Current: | 45 A |
| Manufacturer: | Infineon |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package/Case: | TO-247-3 |
| Packaging: | Tube |
| Part # Aliases: | IPW65R050CFD7A SP003793156 |
| Pd - Power Dissipation: | 227 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 102 nC |
| Qualification: | AEC-Q101 |
| Rds On - Drain-Source Resistance: | 50 mOhms |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 650 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Maximum Continuous Drain Current | 211 A |
| Maximum Drain Source Voltage | 650 V |
| Mounting Type | Through Hole |
| Package Type | PG-TO247-3 |
| Вес, г | 8.064 |
Техническая документация
Datasheet
pdf, 1500 КБ
Документация
pdf, 1563 КБ