SI7850DP-T1-E3, Транзисторы
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Описание
SI78 N-Channel (D-S) MOSFETs Vishay Semiconductors SI78 N-Channel (D-S) MOSFETs are available in a new low thermal resistance PowerPAK® package with a low 1.07mm profile. These N-Channel (D-S) MOSFETs are PWM optimized, 100% Rg tested, halogen-free, and RoHS compliant. The SI78 MOSFETs are used in DC/DC converters, primary side switches for DC/DC applications, and synchronous rectifiers.
Технические параметры
| Brand: | Vishay Semiconductors |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: | 3000 |
| Fall Time: | 12 ns |
| Forward Transconductance - Min: | 26 S |
| Id - Continuous Drain Current: | 6.2 A |
| Manufacturer: | Vishay |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | PowerPAK-SO-8 |
| Part # Aliases: | SI7850DP-E3 |
| Pd - Power Dissipation: | 1.8 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 18 nC |
| Rds On - Drain-Source Resistance: | 22 Ohms |
| Rise Time: | 10 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N Channel |
| Typical Turn-Off Delay Time: | 25 ns |
| Typical Turn-On Delay Time: | 10 ns |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 6.2 A |
| Maximum Drain Source Resistance | 22 mΩ |
| Maximum Drain Source Voltage | 60 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 1.8 W |
| Minimum Gate Threshold Voltage | 1V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | PowerPAK SO-8 |
| Pin Count | 8 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 18 nC @ 10 V |
| Width | 5.89mm |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 360 КБ
Datasheet SI7850DP-T1-E3
pdf, 160 КБ
Трёхмерное изображение изделия
pdf, 137 КБ
Трёхмерное изображение изделия
pdf, 90 КБ