2SC5706-E
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Описание
BIPOLAR TRANSISTOR, NPN, 50V, TO-251-4; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency ft:400MHz; Power Dissipation Pd:15W; DC Collector Current:5A; DC Current Gain hFE:200hFE; Transistor Case Style:TO-251; No. of Pins:4Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:Lead (27-Jun-2018)
Технические параметры
| EU RoHS | Compliant with Exemption |
| ECCN (US) | EAR99 |
| Part Status | Active |
| PCB changed | 3 |
| Package Height | 5.5 |
| Mounting | Through Hole |
| Lead Shape | Through Hole |
| Tab | Tab |
| Package Width | 2.3 |
| Package Length | 6.5 |
| Type | NPN |
| Product Category | Bipolar Power |
| Material | Si |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage (V) | 100 |
| Maximum Collector-Emitter Voltage (V) | 50 |
| Maximum Emitter Base Voltage (V) | 6 |
| Maximum Base Current (A) | 1.2 |
| Maximum Base Emitter Saturation Voltage (V) | 1.2@100mA@2A |
| Operating Junction Temperature (°C) | -55 to 150 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.135@50mA@1A|0.24@100mA@2A |
| Maximum DC Collector Current (A) | 5 |
| Maximum Collector Cut-Off Current (nA) | 1000 |
| Minimum DC Current Gain | 200@500mA@2V |
| Maximum Power Dissipation (mW) | 800 |
| Maximum Transition Frequency (MHz) | 400(Typ) |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Packaging | Bag |
| Automotive | No |
| Supplier Package | IPAK |
| Pin Count | 3 |
| Standard Package Name | TO-251 |
| Military | No |
| Category | Bipolar Power |
| Collector Current (DC) | 5(A) |
| Collector-Base Voltage | 100(V) |
| Collector-Emitter Voltage | 50(V) |
| DC Current Gain | 200@500MA@2V |
| Emitter-Base Voltage | 6(V) |
| Frequency | 400(MHz) |
| Number of Elements | 1 |
| Operating Temp Range | -55C to 150C |
| Operating Temperature Classification | Military |
| Output Power | Not Required(W) |
| Package Type | IPAK |
| Power Dissipation | 0.8(W) |
| Rad Hardened | No |
| Transistor Polarity | NPN |
Техническая документация
Datasheet
pdf, 433 КБ
Datasheet 2SA2039, 2SC5706
pdf, 418 КБ