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Bipolar transistors (BJTs)

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KT209A (2020), Bipolar transistor, PNP, -15V, -0.3A, 0.2W, 5MHz, h21e=20…60 [KT-26 / TO-92] 5-7 days, 1385 pcs. Brand: Integral Structure: pnp Max. ex. k-e at a given current k and an open circuit b. (Ukeo max), V: 15 Maximum allowable current to (Ik max. A): 0.3 Static current transfer ratio h21e min: 20…60 Cutoff frequency of current transfer ratio fgr.MHz: 5 Maximum power dissipation, W: 0.2 Housing: kt-26 (to-92)	quick view	5-7 days, 1385 pcs.	91 ֏ 54 ֏ × from 15 pcs. — 45 ֏
KT209B, Bipolar transistor, PNP, -15V, -0.3A, 0.2W, 5MHz, h21e = 40 ... 120 [KT-26 / TO-92] 5-7 days, 596 pcs. Brand: Integral Structure: pnp Max. ex. k-e at a given current k and an open circuit b. (Ukeo max), V: 15 Maximum allowable current to (Ik max. A): 0.3 Static current transfer ratio h21e min: 40…120 Cutoff frequency of current transfer ratio fgr.MHz: 5 Maximum power dissipation, W: 0.2 Housing: kt-26 (to-92)	quick view	5-7 days, 596 pcs.	91 ֏ 54 ֏ × from 15 pcs. — 45 ֏
KT209V, Bipolar transistor, PNP, -15V, -0.3A, 0.2W, 5MHz, h21e = 80 ... 240 [KT-26 / TO-92] 5-7 days, 499 pcs. Brand: Integral Structure: pnp Max. ex. k-e at a given current k and an open circuit b. (Ukeo max), V: 15 Maximum allowable current to (Ik max. A): 0.3 Static current transfer ratio h21e min: 80…240 Cutoff frequency of current transfer ratio fgr.MHz: 5 Maximum power dissipation, W: 0.2 Housing: kt-26 (to-92)	quick view	5-7 days, 499 pcs.	91 ֏ 54 ֏ × from 15 pcs. — 45 ֏
KT209G, Bipolar transistor, PNP, -30V, -0.3A, 0.2W, 5MHz, h21e = 20 ... 60 [KT-26 / TO-92] 5-7 days, 577 pcs. Brand: Integral Structure: pnp Max. ex. k-e at a given current k and an open circuit b. (Ukeo max), V: 30 Maximum allowable current to (Ik max. A): 0.3 Static current transfer ratio h21e min: 20…60 Cutoff frequency of current transfer ratio fgr.MHz: 5 Maximum power dissipation, W: 0.2 Housing: kt-26 (to-92)	quick view	5-7 days, 577 pcs.	116 ֏ 57 ֏ × from 100 pcs. — 43 ֏
KT209ZH, Bipolar transistor, PNP, -45V, -0.3A, 0.2W, 5MHz, h21e = 20 ... 60 [KT-26 / TO-92] 5-7 days, 931 pcs. Brand: Integral Structure: pnp Max. ex. k-e at a given current k and an open circuit b. (Ukeo max), V: 45 Maximum allowable current to (Ik max. A): 0.3 Static current transfer ratio h21e min: 20…60 Cutoff frequency of current transfer ratio fgr.MHz: 5 Maximum power dissipation, W: 0.2 Housing: kt-26 (to-92)	quick view	5-7 days, 931 pcs.	91 ֏ 54 ֏ × from 15 pcs. — 45 ֏
KT209I, Bipolar transistor, PNP, -45V, -0.3A, 0.2W, 5MHz, h21e = 40 ... 120 [KT-26 / TO-92] 5-7 days, 390 pcs. Brand: Integral Structure: pnp Max. ex. k-e at a given current k and an open circuit b. (Ukeo max), V: 45 Maximum allowable current to (Ik max. A): 0.3 Static current transfer ratio h21e min: 40…120 Cutoff frequency of current transfer ratio fgr.MHz: 5 Maximum power dissipation, W: 0.2 Housing: kt-26 (to-92)	quick view	5-7 days, 390 pcs.	85 ֏ 51 ֏ × from 100 pcs. — 40 ֏
KT209K, Bipolar transistor, PNP, -45V, -0.3A, 0.2W, 5MHz, h21e = 80 ... 160 [KT-26 / TO-92] 5-7 days, 674 pcs. Brand: Integral Structure: pnp Max. ex. k-e at a given current k and an open circuit b. (Ukeo max), V: 45 Maximum allowable current to (Ik max. A): 0.3 Static current transfer ratio h21e min: 80…240 Cutoff frequency of current transfer ratio fgr.MHz: 5 Maximum power dissipation, W: 0.2 Housing: kt-26 (to-92)	quick view	5-7 days, 674 pcs.	128 ֏ 70 ֏ × from 100 pcs. — 53 ֏
KT209L, Bipolar transistor, PNP, -60V, -0.3A, 0.2W, 5MHz, h21e = 20 ... 60 [KT-26 / TO-92] 5-7 days, 377 pcs. Brand: Integral Structure: pnp Max. ex. k-e at a given current k and an open circuit b. (Ukeo max), V: 60 Maximum allowable current to (Ik max. A): 0.3 Static current transfer ratio h21e min: 20…60 Cutoff frequency of current transfer ratio fgr.MHz: 5 Maximum power dissipation, W: 0.2 Housing: kt-26 (to-92)	quick view	5-7 days, 377 pcs.	91 ֏ 54 ֏ × from 15 pcs. — 45 ֏
KT209M (19g. p/p 21g.), Bipolar transistor, PNP, -60V, -0.3A, 0.2W, 5MHz, h21e=40…120 [KT-26 / TO-92] 5-7 days, 457 pcs. Brand: Integral Structure: pnp Max. ex. k-e at a given current k and an open circuit b. (Ukeo max), V: 60 Maximum allowable current to (Ik max. A): 0.3 Static current transfer ratio h21e min: 40…120 Cutoff frequency of current transfer ratio fgr.MHz: 5 Maximum power dissipation, W: 0.2 Housing: kt-26 (to-92)	quick view	5-7 days, 457 pcs.	128 ֏ 70 ֏ × from 100 pcs. — 53 ֏
KT3102AM, Bipolar transistor, NPN, 50V, 0.2A, 0.25W, 200MHz, h21e = 100 ... 250 [KT-26 / TO-92] (= BC547A) 5-7 days, 4335 pcs. Brand: Integral Structure: npn Max. ex. k-e at a given current k and an open circuit b. (Ukeo max), V: 50 Maximum allowable current to (Ik max. A): 0.2 Static current transfer ratio h21e min: 100…250 Cutoff frequency of current transfer ratio fgr.MHz: 200 Maximum power dissipation, W: 0.25 Housing: kt-26 (to-92)	quick view	5-7 days, 4335 pcs.	122 ֏ 80 ֏ × from 15 pcs. — 58 ֏
KT3102VM, Bipolar transistor, NPN, 30V, 0.2A, 0.25W, 200MHz, h21e = 200 ... 500 [KT-26 / TO-92] 5-7 days, 745 pcs. Brand: Integral Structure: npn Max. ex. k-e at a given current k and an open circuit b. (Ukeo max), V: 30 Maximum allowable current to (Ik max. A): 0.2 Static current transfer ratio h21e min: 200…500 Cutoff frequency of current transfer ratio fgr.MHz: 200 Maximum power dissipation, W: 0.25 Housing: kt-26 (to-92)	quick view	5-7 days, 745 pcs.	122 ֏ 80 ֏ × from 15 pcs. — 58 ֏
KT3102GM, Bipolar transistor, NPN, 20V, 0.2A, 0.25W, 200MHz, h21e = 400 ... 800 [KT-26 / TO-92] (= BC548C) 5-7 days, 1988 pcs. Brand: Integral Structure: npn Max. ex. k-e at a given current k and an open circuit b. (Ukeo max), V: 20 Maximum allowable current to (Ik max. A): 0.2 Static current transfer ratio h21e min: 400…1000 Cutoff frequency of current transfer ratio fgr.MHz: 200 Maximum power dissipation, W: 0.25 Housing: kt-26 (to-92)	quick view	5-7 days, 1988 pcs.	182 ֏ 86 ֏ × from 100 pcs. — 71 ֏
KT3102DM, Bipolar transistor, NPN, 30V, 0.2A, 0.25W, 300MHz, h21e = 200 ... 500 [KT-26 / TO-92] (= BC549B) 5-7 days, 389 pcs. Brand: Integral Structure: npn Max. ex. k-e at a given current k and an open circuit b. (Ukeo max), V: 30 Maximum allowable current to (Ik max. A): 0.2 Static current transfer ratio h21e min: 200…500 Cutoff frequency of current transfer ratio fgr.MHz: 200 Maximum power dissipation, W: 0.25 Housing: kt-26 (to-92)	quick view	5-7 days, 389 pcs.	146 ֏ 70 ֏ × from 100 pcs. — 53 ֏
KT3102EM, Bipolar transistor, NPN, 20V, 0.2A, 0.25W, 300MHz, h21e = 400 ... 1000 [KT-26 / TO-92] (= BC549C) 5-7 days, 1473 pcs. Brand: Integral Structure: npn Max. ex. k-e at a given current k and an open circuit b. (Ukeo max), V: 20 Maximum allowable current to (Ik max. A): 0.2 Static current transfer ratio h21e min: 400…1000 Cutoff frequency of current transfer ratio fgr.MHz: 200 Maximum power dissipation, W: 0.25 Housing: kt-26 (to-92)	quick view	5-7 days, 1473 pcs.	182 ֏ 86 ֏ × from 100 pcs. — 71 ֏
KT3102IM, Bipolar transistor, NPN, 50V, 0.2A, 0.25W, 200MHz, h21e = 100… 200 [KT-26 / TO-92] 5-7 days, 449 pcs. Brand: Integral Structure: npn Max. ex. k-e at a given current k and an open circuit b. (Ukeo max), V: 50 Maximum allowable current to (Ik max. A): 0.2 Static current transfer ratio h21e min: 200…500 Cutoff frequency of current transfer ratio fgr.MHz: 200 Maximum power dissipation, W: 0.25 Housing: kt-26 (to-92)	quick view	5-7 days, 449 pcs.	122 ֏ 66 ֏ × from 100 pcs. — 54 ֏
KT3102KM, Bipolar transistor, NPN, 30V, 0.2A, 0.25W, 200MHz, h21e = 200 ... 500 [KT-26 / TO-92] 5-7 days, 513 pcs. Brand: Integral Structure: npn Max. ex. k-e at a given current k and an open circuit b. (Ukeo max), V: 30 Maximum allowable current to (Ik max. A): 0.2 Static current transfer ratio h21e min: 200…500 Cutoff frequency of current transfer ratio fgr.MHz: 200 Maximum power dissipation, W: 0.25 Housing: kt-26 (to-92)	quick view	5-7 days, 513 pcs.	122 ֏ 71 ֏ × from 100 pcs. — 57 ֏
KT3107A, Bipolar transistor, PNP, -45V, -0.1A, 0.3W, 250MHz, h21e = 70 ... 140 [KT-26 / TO-92] 5-7 days, 5468 pcs. Brand: Integral Structure: pnp Max. ex. k-e at a given current k and an open circuit b. (Ukeo max), V: 45 Maximum allowable current to (Ik max. A): 0.1 Static current transfer ratio h21e min: 70…140 Cutoff frequency of current transfer ratio fgr.MHz: 200 Maximum power dissipation, W: 0.3 Housing: kt-26 (to-92)	quick view	5-7 days, 5468 pcs.	91 ֏ 54 ֏ × from 15 pcs. — 45 ֏
KT3107B, Bipolar transistor, PNP, -45V, -0.1A, 0.3W, 250MHz, h21e = 120 ... 220 [KT-26 / TO-92] (= BC307A) 5-7 days, 2551 pcs. Brand: Integral Structure: pnp Max. ex. k-e at a given current k and an open circuit b. (Ukeo max), V: 45 Maximum allowable current to (Ik max. A): 0.1 Static current transfer ratio h21e min: 120…220 Cutoff frequency of current transfer ratio fgr.MHz: 200 Maximum power dissipation, W: 0.3 Housing: kt-26 (to-92)	quick view	5-7 days, 2551 pcs.	158 ֏ 88 ֏ × from 100 pcs. — 69 ֏
KT3107V, Bipolar transistor, PNP, -25V, -0.1A, 0.3W, 250MHz, h21e = 70 ... 140 [KT-26 / TO-92] 5-7 days, 639 pcs. Brand: Integral Structure: pnp Max. ex. k-e at a given current k and an open circuit b. (Ukeo max), V: 25 Maximum allowable current to (Ik max. A): 0.1 Static current transfer ratio h21e min: 70…140 Cutoff frequency of current transfer ratio fgr.MHz: 200 Maximum power dissipation, W: 0.3 Housing: kt-26 (to-92)	quick view	5-7 days, 639 pcs.	122 ֏ 69 ֏ × from 15 pcs. — 59 ֏
KT3107G, Bipolar transistor, PNP, -25V, -0.1A, 0.3W, 250MHz, h21e = 120 ... 220 [KT-26 / TO-92] (= BC308A) 5-7 days, 571 pcs. Brand: Integral Structure: pnp Max. ex. k-e at a given current k and an open circuit b. (Ukeo max), V: 25 Maximum allowable current to (Ik max. A): 0.1 Static current transfer ratio h21e min: 120…220 Cutoff frequency of current transfer ratio fgr.MHz: 200 Maximum power dissipation, W: 0.3 Housing: kt-26 (to-92)	quick view	5-7 days, 571 pcs.	122 ֏ 69 ֏ × from 15 pcs. — 59 ֏

Bipolar transistors are three-electrode semiconductor devices, in which the electrodes are connected to sequentially arranged layers of semiconductors with alternating impurity conduction.

Depending on the alternation method, there are pnp and npn bipolar transistors.

Unlike field-effect transistors, the operation of bipolar transistors is based on the transfer of electric charge of two types, the carriers of which are holes and electrons.

The electrodes connected to the middle layer are called the base, and the electrodes connected to the outer layers are called the collector and emitter (these layers differ in the degree of doping with impurities).

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Bipolar transistors (BJTs)

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