BPW85A, Фототранзистор, 850 нм, 25 °, 100 мВт, 2 вывод(-ов), T-1 (3mm)
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
680 ֏
Мин. кол-во для заказа 17 шт.
от 25 шт. —
396 ֏
Добавить в корзину 17 шт.
на сумму 11 560 ֏
Описание
Phototransistor Chip Silicon 850nm 2-Pin T-1 Bulk
Технические параметры
| Automotive | No |
| Diameter | 3.4 |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Fabrication Technology | NPN Transistor |
| Half Intensity Angle Degrees (°) | 50 |
| Lead Shape | Through Hole |
| Lens Color | Clear |
| Lens Shape Type | Domed |
| Material | Silicon |
| Maximum Collector Current (mA) | 50 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.3 |
| Maximum Collector-Emitter Voltage (V) | 70 |
| Maximum Dark Current (nA) | 200 |
| Maximum Emitter-Collector Voltage (V) | 5 |
| Maximum Light Current (uA) | 2500 |
| Maximum Operating Temperature (°C) | 100 |
| Maximum Power Dissipation (mW) | 100 |
| Minimum Operating Temperature (°C) | -40 |
| Mounting | Through Hole |
| Number of Channels per Chip | 1 |
| Packaging | Bulk |
| Part Status | Active |
| PCB changed | 2 |
| Peak Wavelength (nm) | 850 |
| Phototransistor Type | Phototransistor |
| Pin Count | 2 |
| Polarity | NPN |
| PPAP | No |
| Standard Package Name | T-1 |
| Supplier Package | T-1 |
| Type | Chip |
| Viewing Orientation | Top View |
| Angle of Half Sensitivity | 50 ° |
| Collector Current | 50mA |
| Maximum Dark Current | 200nA |
| Maximum Wavelength Detected | 1080nm |
| Minimum Wavelength Detected | 450nm |
| Mounting Type | Through Hole |
| Number of Channels | 1 |
| Number of Pins | 2 |
| Package Type | 3mm(T-1) |
| Spectral Range of Sensitivity | 450 → 1080 nm |
| Spectrums Detected | Infrared, Visible Light |
| Typical Fall Time | 2.3µs |
| Typical Rise Time | 2µs |
| Width | 3.4mm |
| Wavelength Typ | 850nm; Viewing Angle |
| Вес, г | 0.145 |
