VEMT2020X01, Фототранзистор, 860 нм, 15 °, 100 мВт, 2 вывод(-ов)
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Описание
Описание Фототранзистор, -p макс 570нм, 1,5В, 50°, Линза прозрачная, 5мм
Технические параметры
| Automotive | Yes |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Fabrication Technology | NPN Transistor |
| Half Intensity Angle Degrees (°) | 30 |
| Lens Color | Black |
| Lens Shape Type | Domed |
| Material | Silicon |
| Maximum Collector Current (mA) | 50 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.4 |
| Maximum Collector-Emitter Voltage (V) | 20 |
| Maximum Dark Current (nA) | 100 |
| Maximum Emitter-Collector Voltage (V) | 7 |
| Maximum Light Current (uA) | 9000 |
| Maximum Operating Temperature (°C) | 100 |
| Maximum Power Dissipation (mW) | 100 |
| Minimum Operating Temperature (°C) | -40 |
| Mounting | Surface Mount |
| Number of Channels per Chip | 1 |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 2 |
| Peak Wavelength (nm) | 860 |
| Phototransistor Type | Phototransistor |
| Pin Count | 2 |
| Polarity | NPN |
| PPAP | Unknown |
| Standard Package Name | SMD |
| Supplier Package | SMD |
| Type | IR Chip |
| Viewing Orientation | Top View |
| Angle of Half Sensitivity | 30 ° |
| Collector Current | 50mA |
| Maximum Dark Current | 100nA |
| Maximum Light Current | 9000µA |
| Maximum Wavelength Detected | 970nm |
| Minimum Wavelength Detected | 790nm |
| Mounting Type | Surface Mount |
| Number of Channels | 1 |
| Number of Pins | 2 |
| Spectral Range of Sensitivity | 790 → 970 nm |
| Spectrums Detected | Infrared |
| Width | 2.3mm |
| Current - Collector (Ic) (Max) | 50mA |
| Current - Dark (Id) (Max) | 100nA |
| Orientation | Top View |
| Other Names | VEMT2020X01DKR |
| Package / Case | 2-SMD, Gull Wing |
| Power - Max | 100mW |
| Standard Package | 1 |
| Viewing Angle | 30° |
| Voltage - Collector Emitter Breakdown (Max) | 20V |
| Wavelength | 860nm |
| Вес, г | 0.093 |
