LTR4206E

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294 шт. с центрального склада, срок 3 недели

550 ֏

Мин. кол-во для заказа 2 шт.

от 5 шт. — 324 ֏

от 10 шт. — 249 ֏

от 100 шт. — 176 ֏

Добавить в корзину 2 шт. на сумму 1 100 ֏

Альтернативные предложения3

Номенклатурный номер: 8001934341

Электроэлемент

Описание Фототранзистор, черная, 20°, -p макс 940нм, 100нА, 30В, THT Характеристики

Монтаж

THT

Current - Collector (Ic) (Max)	4.8mA
Current - Dark (Id) (Max)	100nA
Manufacturer	Lite-On Inc.
Mounting Type	Through Hole
Operating Temperature	-40В°C ~ 85В°C(TA)
Orientation	Top View
Package / Case	T-1
Packaging	Bulk
Part Status	Active
Power - Max	100mW
Viewing Angle	20В°
Voltage - Collector Emitter Breakdown (Max)	30V
Wavelength	940nm
ECCN	EAR99
HTSUS	8541.40.7080
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Package	Bulk
RoHS Status	ROHS3 Compliant
Automotive	No
Cut-Off Filter	Visible Cut-off
Diameter	4
ECCN (US)	EAR99
EU RoHS	Compliant
Fabrication Technology	NPN Transistor
Half Intensity Angle Degrees (°)	10
Lead Shape	Through Hole
Lens Color	Clear
Lens Shape Type	Domed
Material	Silicon
Maximum Collector Current (mA)	4.5
Maximum Collector-Emitter Saturation Voltage (V)	0.4
Maximum Collector-Emitter Voltage (V)	30
Maximum Dark Current (nA)	100
Maximum Emitter-Collector Voltage (V)	5
Maximum Fall Time (ns)	15000(Typ)
Maximum Light Current (uA)	2000(Typ)
Maximum Operating Temperature (°C)	85
Maximum Power Dissipation (mW)	100
Maximum Rise Time (ns)	10000(Typ)
Minimum Operating Temperature (°C)	-40
Mounting	Through Hole
Number of Channels per Chip	1
PCB changed	2
Phototransistor Type	Phototransistor
Pin Count	2
Polarity	NPN
PPAP	No
Standard Package Name	T-1
Supplier Package	T-1
Type	IR Chip
Viewing Orientation	Top View
Collector-emitter voltage	30V
Dark current	0.1µA
LED diameter	3mm
LED lens	black
Type of photoelement	phototransistor
Wavelength of peak sensitivity	940nm
Вес, г	0.128