TSFF5510
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см. техническую документацию
см. техническую документацию
1 960 ֏
от 2 шт. —
1 530 ֏
от 5 шт. —
1 270 ֏
от 10 шт. —
1 160 ֏
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на сумму 1 960 ֏
Описание
Электроэлемент
870 nm 100 mA ±38° Through Hole High Speed Infrared Emitting Diode - T-1 3/4
Технические параметры
| Fall Time | 15(ns) |
| Forward Voltage | 2.1(V) |
| Mounting | Through Hole |
| Operating Temp Range | -40C to 85C |
| Operating Temperature Classification | Industrial |
| Package Type | T-1 3/4 |
| Peak Wavelength | 870(nm) |
| Photodiode Material | InGaAs |
| Pin Count | 2 |
| Polarity | Forward |
| Power Dissipation | 0.18(W) |
| Rad Hardened | No |
| Reverse Breakdown Voltage | 5(V) |
| Rise Time | 15(ns) |
| Type | Module |
| Current - DC Forward (If) (Max) | 100mA |
| Manufacturer | Vishay Semiconductor Opto Division |
| Mounting Type | Through Hole |
| Operating Temperature | -40В°C ~ 85В°C(TA) |
| Orientation | Top View |
| Package / Case | Radial |
| Packaging | Bulk |
| Part Status | Active |
| Radiant Intensity (Ie) Min @ If | 16mW/sr @ 100mA |
| Series | - |
| Viewing Angle | 76В° |
| Voltage - Forward (Vf) (Typ) | 1.3V |
| Wavelength | 870nm |
| Brand: | Vishay Semiconductors |
| Factory Pack Quantity: | 4000 |
| If - Forward Current: | 100 mA |
| Illumination Colour: | Infrared |
| Manufacturer: | Vishay |
| Maximum Operating Temperature: | +85 C |
| Minimum Operating Temperature: | -40 C |
| Mounting Style: | Through Hole |
| Packaging: | Bulk |
| Power Rating: | 180 mW |
| Product Category: | Infrared Emitters-High Power |
| Product Type: | IR Emitters(IR LEDs) |
| Radiant Intensity: | 32 mW/sr |
| Rise Time: | 15 ns |
| Subcategory: | Infrared Data Communications |
| Vf - Forward Voltage: | 1.45 V |
| Wavelength: | 870 nm |
| Вес, г | 0.22 |
Техническая документация
Документация
pdf, 92 КБ
Трёхмерное изображение изделия
zip, 38 КБ
