CSD19537Q3T, MOSFET 100-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 14.5 mOhm 8-VSON-CLIP -55 to 150
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
Описание Транзистор: N-MOSFET, полевой, 100В, 50А, 83Вт, VSON-CLIP8 Характеристики Категория | Транзистор |
Тип | полевой |
Вид | MOSFET |
Технические параметры
Brand: | Texas Instruments |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 750 |
Fall Time: | 3 ns |
Forward Transconductance - Min: | 45 S |
Id - Continuous Drain Current: | 53 A |
Manufacturer: | Texas Instruments |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | VSON-CLIP-8 |
Pd - Power Dissipation: | 83 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 16 nC |
Rds On - Drain-Source Resistance: | 14.5 mOhms |
Rise Time: | 3 ns |
Series: | CSD19537Q3 |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | NexFET |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 10 ns |
Typical Turn-On Delay Time: | 5 ns |
Vds - Drain-Source Breakdown Voltage: | 100 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 2.6 V |
Вес, г | 0.363 |