VEMT2023X01, Phototransistors Gullwing 790-970nm +/-35 deg
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см. техническую документацию
см. техническую документацию
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Описание
Фототранзистор Chip Silicon 860nm Automotive 2-Pin SMD T / R
Технические параметры
| Automotive | Yes |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Fabrication Technology | NPN |
| Half Intensity Angle Degrees (°) | 35 |
| Lens Shape Type | Domed |
| Material | Silicon |
| Maximum Collector Current (mA) | 50 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.4 |
| Maximum Collector-Emitter Voltage (V) | 20 |
| Maximum Dark Current (nA) | 100 |
| Maximum Emitter-Collector Voltage (V) | 7 |
| Maximum Light Current (uA) | 4100 |
| Maximum Operating Temperature (°C) | 100 |
| Maximum Power Dissipation (mW) | 100 |
| Minimum Operating Temperature (°C) | -40 |
| Mounting | Surface Mount |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 2 |
| Peak Wavelength (nm) | 860 |
| Phototransistor Type | Phototransistor |
| Pin Count | 2 |
| Polarity | NPN |
| PPAP | Unknown |
| Standard Package Name | SMD |
| Supplier Package | SMD |
| Type | Chip |
| Viewing Orientation | Top View |
| Half Intensity Angle Degrees - (??) | 35 |
| Maximum Collector Current - (mA) | 50 |
| Maximum Collector-Emitter Saturation Voltage - (V) | 0.4 |
| Maximum Collector-Emitter Voltage - (V) | 20 |
| Maximum Dark Current - (nA) | 100 |
| Maximum Emitter-Collector Voltage - (V) | 7 |
| Maximum Light Current - (uA) | 4100 |
| Maximum Power Dissipation - (mW) | 100 |
| Military | No |
| Operating Temperature - (??C) | -40~100 |
| Peak Wavelength - (nm) | 860 |
Техническая документация
Datasheet VEMT2023X01
pdf, 204 КБ
Документация
pdf, 199 КБ
