BPW96C, Phototransistors T-1.75 450 to 1080nm +/-20 deg

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1 270 ֏

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Номенклатурный номер: 8006403747

Описание Фототранзистор, 5мм, -p макс: 850нм, 70В, 20°, Линза: прозрачная Характеристики

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THT

Automotive	No
Diameter	5.75
ECCN (US)	EAR99
EU RoHS	Compliant
Fabrication Technology	NPN Transistor
Half Intensity Angle Degrees (°)	40
Lead Shape	Through Hole
Lens Color	Clear
Lens Shape Type	Domed
Material	Silicon
Maximum Collector Current (mA)	50
Maximum Collector-Emitter Saturation Voltage (V)	0.3
Maximum Collector-Emitter Voltage (V)	70
Maximum Dark Current (nA)	200
Maximum Emitter-Collector Voltage (V)	5
Maximum Light Current (uA)	15000
Maximum Operating Temperature (°C)	100
Maximum Power Dissipation (mW)	150
Minimum Operating Temperature (°C)	-40
Mounting	Through Hole
Number of Channels per Chip	1
Packaging	Bulk
Part Status	Active
PCB changed	2
Peak Wavelength (nm)	850
Phototransistor Type	Phototransistor
Pin Count	2
Polarity	NPN
PPAP	No
Standard Package Name	T-1 3/4
Supplier Package	T-1 3/4
Type	IR Chip
Viewing Orientation	Top View
Angle of Half Sensitivity	40 °
Collector Current	50mA
Maximum Dark Current	200nA
Maximum Light Current	15000µA
Maximum Wavelength Detected	1080nm
Minimum Wavelength Detected	450nm
Mounting Type	Through Hole
Number of Channels	1
Number of Pins	2
Package Type	5mm(T-1 3/4)
Spectral Range of Sensitivity	450 → 1080 nm
Spectrums Detected	Infrared, Visible Light
Typical Fall Time	2.3µs
Typical Rise Time	2µs
Width	5.75mm
Wavelength Typ	850nm; Viewing Angle