BPW85A

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800 ֏
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от 10 шт.265 ֏
Добавить в корзину 1 шт. на сумму 800 ֏
Номенклатурный номер: 8002830280

Описание

Электроэлемент
PHOTOTRANSISTOR, NPN, T-1; Wavelength Typ:850nm; Viewing Angle:25В°; Power Consumption:100mW; No. of Pins:2Pins; Transistor Case Style:T-1 (3mm); Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (15-Jan-2019); Angle of Half Sensitivity В±:25В°; Current Ic Typ:50mA; Operating Temperature Max:100В°C; Operating Temperature Min:-40В°C; Operating Temperature Range:-40В°C to +100В°C; Peak Spectral Response Wavelength:850nm; Rise Time:2Вµs; Transistor Polarity:NPN; Transistor Type:Photo

Технические параметры

Wavelength Typ 850nm; Viewing Angle
Automotive No
Diameter 3.4
ECCN (US) EAR99
EU RoHS Compliant
Fabrication Technology NPN Transistor
Half Intensity Angle Degrees (°) 50
Lead Shape Through Hole
Lens Color Clear
Lens Shape Type Domed
Material Silicon
Maximum Collector Current (mA) 50
Maximum Collector-Emitter Saturation Voltage (V) 0.3
Maximum Collector-Emitter Voltage (V) 70
Maximum Dark Current (nA) 200
Maximum Emitter-Collector Voltage (V) 5
Maximum Light Current (uA) 2500
Maximum Operating Temperature (°C) 100
Maximum Power Dissipation (mW) 100
Minimum Operating Temperature (°C) -40
Mounting Through Hole
Number of Channels per Chip 1
Packaging Bulk
Part Status Active
PCB changed 2
Peak Wavelength (nm) 850
Phototransistor Type Phototransistor
Pin Count 2
Polarity NPN
PPAP No
Standard Package Name T-1
Supplier Package T-1
Type Chip
Viewing Orientation Top View
Angle of Half Sensitivity 50 °
Collector Current 50mA
Maximum Dark Current 200nA
Maximum Wavelength Detected 1080nm
Minimum Wavelength Detected 450nm
Mounting Type Through Hole
Number of Channels 1
Number of Pins 2
Package Type 3mm(T-1)
Spectral Range of Sensitivity 450 → 1080 nm
Spectrums Detected Infrared, Visible Light
Typical Fall Time 2.3µs
Typical Rise Time 2µs
Width 3.4mm
Вес, г 0.145

Техническая документация

Datasheet
pdf, 89 КБ
Datasheet BPW85A
pdf, 101 КБ
Документация
pdf, 98 КБ