VBP104S, Photodiodes Gullwing 430-1100nm +/-65 deg
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Описание
DIODE, PHOTO, 940NM, 65 , SMD, No. of Pins:2Pins, Diode Case Style:SMD, Wavelength of Peak Sensitivity:940nm, Angle of Half Sensitivity :65 , Dark Current:2nA, Operating Temperature Min:-40 C, Operating Temperature Max:100 C , RoHS Compliant: Yes
Технические параметры
Brand | Vishay Semiconductors |
Dark Current | 2 nA |
Factory Pack Quantity | 1000 |
Fall Time | 100 ns |
Half Intensity Angle Degrees | 65 deg |
Height | 1.2 mm |
If - Forward Current | 50 mA |
Length | 6.4 mm |
Manufacturer | Vishay |
Maximum Operating Temperature | +100 C |
Minimum Operating Temperature | -40 C |
Mounting Style | SMD/SMT |
Noise Equivalent Power - NEP | 4E-14 W/sqrt Hz |
Packaging | Reel |
Pd - Power Dissipation | 215 mW |
Peak Wavelength | 940 nm |
Photocurrent | 35 uA |
Product | PIN Photodiodes |
Product Category | Photodiodes |
Rise Time | 100 ns |
RoHS | Details |
Type | Silicon PIN Photodiode |
Vf - Forward Voltage | 1 V |
Vr - Reverse Voltage | 60 V |
Width | 3.9 mm |
Техническая документация
Документация
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