QSB34CGR
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см. техническую документацию
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Описание
Электроэлемент
PIN PHOTO DIODE, 30NA, PLCC-2; No. of Pins:2Pins; Diode Case Style:PLCC; Wavelength of Peak Sensitivity:940nm; Angle of Half Sensitivity В±:60В°; Dark Current:0.03ВµA; Operating Temperature Min:-25В°C; Operating Temperature
Технические параметры
Brand | ON Semiconductor/Fairchild |
Dark Current | 30 nA |
Factory Pack Quantity | 1000 |
Fall Time | 50 ns |
Half Intensity Angle Degrees | 60 deg |
Height | 1.2 mm |
Length | 3 mm |
Manufacturer | ON Semiconductor |
Maximum Operating Temperature | +85 C |
Minimum Operating Temperature | -25 C |
Mounting Style | SMD/SMT |
Package / Case | PLCC-2 |
Packaging | Reel |
Pd - Power Dissipation | 150 mW |
Peak Wavelength | 940 nm |
Photocurrent | 37 uA |
Product | PIN Photodiodes |
Product Category | Photodiodes |
Rise Time | 50 ns |
RoHS | Details |
Series | QSB34 |
Unit Weight | 0.001623 oz |
Vr - Reverse Voltage | 32 V |
Width | 3 mm |
Amplifier Function | No |
Diode Material | Si |
Maximum Wavelength Detected | 1100nm |
Minimum Wavelength Detected | 400nm |
Mounting Type | Surface Mount |
Number of Pins | 2 |
Package Type | PLCC 2L |
Spectrums Detected | Infrared |
Wavelength of Peak Sensitivity | 940nm |
Вес, г | 0.1654 |
Техническая документация
Datasheet
pdf, 390 КБ
Документация
pdf, 570 КБ