KDT00030TR, Фототранзистор, 5мм, p макс 880нм, 5В, 50°
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Описание
Phototransistor Chip 630nm 2-Pin SMD T/R
Технические параметры
Brand | ON Semiconductor/Fairchild |
Collector- Emitter Voltage VCEO Max | 6 V |
Collector-Emitter Saturation Voltage | 4.6 V |
Dark Current | 0.1 uA |
Factory Pack Quantity | 3000 |
Height | 0.6 mm |
Length | 1.7 mm |
Light Current | 1100 uA |
Manufacturer | ON Semiconductor |
Maximum Operating Temperature | +85 C |
Minimum Operating Temperature | -40 C |
Mounting Style | SMD/SMT |
Package / Case | SMD |
Packaging | Reel |
Peak Wavelength | 630 nm |
Product | Phototransistors |
Product Category | Phototransistors |
RoHS | Details |
Series | KDT00030 |
Type | Chip |
Unit Weight | 0.00454 oz |
Wavelength | 630 nm |
Width | 0.8 mm |
Automotive | No |
ECCN (US) | EAR99 |
EU RoHS | Compliant |
Fabrication Technology | NPN Transistor |
Lens Shape Type | Flat |
Maximum Collector-Emitter Saturation Voltage (V) | 4.6(Typ) |
Maximum Collector-Emitter Voltage (V) | 60 |
Maximum Dark Current (nA) | 100 |
Maximum Light Current (uA) | 1100(Typ) |
Maximum Operating Temperature (°C) | 85 |
Minimum Operating Temperature (°C) | -40 |
Mounting | Surface Mount |
Number of Channels per Chip | 1 |
Part Status | Active |
PCB changed | 2 |
Peak Wavelength (nm) | 630 |
Phototransistor Type | Phototransistor |
Pin Count | 2 |
Polarity | NPN |
PPAP | No |
Standard Package Name | SMD |
Supplier Package | SMD |
Viewing Orientation | Top View |
Maximum Dark Current | 100nA |
Maximum Light Current | 1100µA |
Maximum Wavelength Detected | 630nm |
Mounting Type | Surface Mount |
Number of Channels | 1 |
Number of Pins | 2 |
Spectral Range of Sensitivity | Maximum of 630 nm |
Вес, г | 0.01 |