VEMT2000X01, IR Phototransistor 860 nm 20 V SMD
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Описание
Optical Sensors / Solar Cells
Фототранзистор IR Chip Silicon 860nm Automotive 2-Pin SMD T / R
Технические параметры
Automotive | Yes |
ECCN (US) | EAR99 |
EU RoHS | Compliant |
Fabrication Technology | NPN Transistor |
Half Intensity Angle Degrees (°) | 30 |
Lens Color | Black |
Lens Shape Type | Domed |
Material | Silicon |
Maximum Collector Current (mA) | 50 |
Maximum Collector-Emitter Saturation Voltage (V) | 0.4 |
Maximum Collector-Emitter Voltage (V) | 20 |
Maximum Dark Current (nA) | 100 |
Maximum Emitter-Collector Voltage (V) | 7 |
Maximum Light Current (uA) | 9000 |
Maximum Operating Temperature (°C) | 100 |
Maximum Power Dissipation (mW) | 100 |
Minimum Operating Temperature (°C) | -40 |
Mounting | Surface Mount |
Number of Channels per Chip | 1 |
Packaging | Tape and Reel |
Part Status | Active |
PCB changed | 2 |
Peak Wavelength (nm) | 860 |
Phototransistor Type | Phototransistor |
Pin Count | 2 |
Polarity | NPN |
PPAP | Unknown |
Standard Package Name | SMD |
Supplier Package | SMD |
Type | IR Chip |
Viewing Orientation | Top View |
Angle of Half Sensitivity | 30 ° |
Collector Current | 50mA |
Maximum Dark Current | 100nA |
Maximum Light Current | 9000µA |
Maximum Wavelength Detected | 970nm |
Minimum Wavelength Detected | 790nm |
Mounting Type | Surface Mount |
Number of Channels | 1 |
Number of Pins | 2 |
Spectral Range of Sensitivity | 790 → 970 nm |
Spectrums Detected | Infrared |
Width | 2.3mm |
Вес, г | 0.1 |
Техническая документация
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