2SK208-Y(TE85L,F), JFET Junction FET N-Ch 0.3 to 6.5mA 10mA

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24611 шт., срок 8-10 недель

600 ֏

Добавить в корзину 1 шт. на сумму 600 ֏

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Номенклатурный номер: 8005268140

Бренд: Toshiba

Semiconductors\Discrete Semiconductors\Transistors\JFET

JFET N-Channel 50 В 6,5 мА 100 мВт S-Mini для поверхностного монтажа

Brand:	Toshiba
Configuration:	Single
Drain-Source Current at Vgs=0:	1.2 mA
Factory Pack Quantity:	3000
Gate-Source Cut-off Voltage:	-5 V
Id - Continuous Drain Current:	6.5 mA
Manufacturer:	Toshiba
Mounting Style:	SMD/SMT
Package/Case:	SC-59-3
Pd - Power Dissipation:	100 mW
Product Category:	JFET
Product Type:	JFETs
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	N-Channel
Type:	JFET
Vds - Drain-Source Breakdown Voltage:	10 V
Vgs - Gate-Source Breakdown Voltage:	-30 V
Base Product Number	TC74VCX162 ->
Current - Drain (Idss) @ Vds (Vgs=0)	1.2mA @ 10V
Current Drain (Id) - Max	6.5mA
ECCN	EAR99
FET Type	N-Channel
HTSUS	8541.21.0095
Input Capacitance (Ciss) (Max) @ Vds	8.2pF @ 10V
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Surface Mount
Operating Temperature	125В°C (TJ)
Package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Package / Case	TO-236-3, SC-59, SOT-23-3
Power - Max	100mW
RoHS Status	RoHS Compliant
Supplier Device Package	S-Mini
Voltage - Breakdown (V(BR)GSS)	50V
Voltage - Cutoff (VGS off) @ Id	400mV @ 100nA
Pd - Power Dissipation	100mW
Transistor Polarity	N Trench
Drain Current (Idss@Vds,Vgs=0)	1.2mA@10V
Gate-Source Breakdown Voltage (V(BR)GSS)	50V
Gate-Source Cutoff Voltage (VGS(off)@ID)	400mV@100nA
Input Capacitance (Ciss@Vds)	8.2pF@10V
Static Drain-Source On Resistance (RDS(on))	-
Total Device Dissipation (Pd)	100mW
Вес, г	0.01