Home › Electronic components › Transistors › Field effect transistors (FETs, MOSFETs)

Field effect transistors (FETs, MOSFETs)

_{over 1000}

Order by: RecommendBestsellersLow-pricedHigh-priced

Min. Price	֏
Max. Price	֏

AUIRF1324, Transistor, Auto Q101 Nch 24V 353A [TO-220AB] Brand: IR Structure: n-channel Maximum drain-source voltage Usi, V: 24 Maximum drain-source current at 25 C Isi max..A: 353 Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.0015 Ohm / 195A, 10V Maximum power dissipation Psi max..W: 300 Housing: TO-220AB	quick view		2 130 ֏ 1 600 ֏ × from 15 pcs. — 1 590 ֏
AUIRL1404S, Auto Q101 Nch 40V 160A D2Pak Brand: IR Structure: n-channel Maximum drain-source voltage Usi, V: 40 Maximum drain-source current at 25 C Isi max..A: 160 Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.004 Ohm/95A, 10V Maximum power dissipation Psi max..W: 200 Slope of characteristic, S: 93 Housing: D2PAK(2 Leads+Tab)	quick view		4 440 ֏ ×
IRF5810TRPBF, Transistor, HEXFET, 2P-channel 20V 2.9A [TSOP-6] Brand: IR Structure: 2p-channels Maximum drain-source voltage Usi, V: 20 Maximum drain-source current at 25 C Isi max..A: 2.9 Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.09 Ohm / 2.9A, 4.5V Maximum power dissipation Psi max..W: 0.96 Slope of characteristic, S: 5.4 Housing: TSOP-6/TSOT-23-6	quick view		158 ֏ 106 ֏ × from 100 pcs. — 91 ֏
IRF5852TRPBF, Transistor, HEXFET, 2N-channel 20V 2.7A [TSOP-6] Brand: IR Structure: 2n-channel Maximum drain-source voltage Usi, V: 20 Maximum drain-source current at 25 C Isi max..A: 2.7 Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.09 Ohm / 2.7A, 4.5V Maximum power dissipation Psi max..W: 0.96 Slope of characteristic, S: 5.2 Housing: TSOP-6/TSOT-23-6	quick view		364 ֏ 233 ֏ × from 50 pcs. — 210 ֏
IRF7210TRPBF, Transistor, P-channel 12V 16A [SO-8] (= IRF7210PBF) Brand: IR Structure: p-channel Maximum drain-source voltage Usi, V: 12 Maximum drain-source current at 25 C Isi max..A: 16 Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.007 Ohm / 16A, 4.5V Maximum power dissipation Psi max..W: 2.5 Slope of characteristic, S: 16 Housing: soic-8	quick view		1 160 ֏ 760 ֏ × from 10 pcs. — 730 ֏
IRF7821PBF, Transistor, N-channel 30V 13.6A [SO-8] Brand: IR Structure: n-channel Maximum drain-source voltage Usi, V: 30 Maximum drain-source current at 25 C Isi max..A: 11 Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.0091 Ohm / 13A, 10V Maximum power dissipation Psi max..W: 2.5 Slope of characteristic, S: 22 Housing: soic-8	quick view		850 ֏ 670 ֏ × from 25 pcs. — 620 ֏
IRFB31N20DPBF, Transistor, N-channel 200V 31A [TO-220AB] Brand: IR Structure: n-channel Maximum drain-source voltage Usi, V: 200 Maximum drain-source current at 25 C Isi max..A: 31 Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.082 Ohm / 18A, 10V Maximum power dissipation Psi max..W: 200 Slope of characteristic, S: 1.7 Housing: TO-220AB	quick view		2 410 ֏ × from 15 pcs. — 2 310 ֏
IRFIZ48NPBF, Transistor Brand: IR	quick view		260 ֏ × from 5 pcs. — 187 ֏
IRL2910SPBF, Nch 100V 55A [D2Pak] Brand: IR Structure: n-channel Maximum drain-source voltage Usi, V: 100 Maximum drain-source current at 25 C Isi max..A: 55 Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.026 Ohm / 29A, 10V Maximum power dissipation Psi max..W: 200 Slope of characteristic, S: 28 Housing: D2PAK(2 Leads+Tab)	quick view		2 220 ֏ ×
IRL3103PBF, Transistor, N-channel 30V 56A [TO-220AB] Brand: IR Structure: n-channel Maximum drain-source voltage Usi, V: 30 Maximum drain-source current at 25 C Isi max..A: 64 Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.012 Ohm / 34A, 10V Maximum power dissipation Psi max..W: 94 Slope of characteristic, S: 22 Housing: TO-220AB	quick view		1 270 ֏ × from 15 pcs. — 1 230 ֏
IRLR7821TRPBF, Transistor, N-channel 30V 65A [D-PAK] Brand: IR Structure: n-channel Maximum drain-source voltage Usi, V: 30 Maximum drain-source current at 25 C Isi max..A: 65 Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.01 Ohm / 15A, 10V Maximum power dissipation Psi max..W: 75 Slope of characteristic, S: 46 Housing: DPAK(2 Leads+Tab)	quick view		850 ֏ 570 ֏ × from 15 pcs. — 550 ֏
IRLS3034-7PPBF, Transistor N-CH 40V 240A, [D2-PAK-7] Brand: IR Structure: n-channel Maximum drain-source voltage Usi, V: 40 Maximum drain-source current at 25 C Isi max..A: 380 Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.0014 Ohm/200A, 10V Maximum power dissipation Psi max..W: 380 Slope of characteristic, S: 370 Housing: D2PAK-7(6 Leads+Tab)	quick view		1 720 ֏ × from 15 pcs. — 1 690 ֏
100N03A, Transistor N-MOSFET 30V 90A [TO-252] 5-7 days, 3794 pcs. Brand: UMW Structure: n-channel Maximum drain-source voltage Usi, V: 30 Maximum drain-source current at 25 C Isi max..A: 90 Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.038 ohm/30A, 10V Maximum power dissipation Psi max..W: 105 Housing: TO-252/DPAK	quick view	5-7 days, 3794 pcs.	87 ֏ × from 50 pcs. — 77 ֏
10N65F, Transistor N-MOSFET 650V 10A [TO-220F] 5-7 days, 713 pcs. Brand: UMW Structure: n-channel Maximum drain-source voltage Usi, V: 650 Maximum drain-source current at 25 C Isi max..A: 1 Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 8.5 ohm/0.5A, 10V Housing: TO-220F	quick view	5-7 days, 713 pcs.	280 ֏ × from 50 pcs. — 253 ֏
12N10, Transistor N-MOSFET 100V 15A [TO-252] 5-7 days, 2340 pcs. Brand: UMW Structure: n-channel Maximum drain-source voltage Usi, V: 100 Maximum drain-source current at 25 C Isi max..A: 15 Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.114 ohm/10A, 10V Maximum power dissipation Psi max..W: 96 Slope of characteristic, S: 35 Housing: TO-252/DPAK	quick view	5-7 days, 2340 pcs.	89 ֏ × from 100 pcs. — 82 ֏
15N10, Transistor N-MOSFET 100V 15A [TO-252] 5-7 days, 1934 pcs. Brand: UMW Structure: n-channel Maximum drain-source voltage Usi, V: 100 Maximum drain-source current at 25 C Isi max..A: 15 Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.095 Ohm / 10A, 10V Maximum power dissipation Psi max..W: 55 Slope of characteristic, S: 2 Housing: TO-252/DPAK	quick view	5-7 days, 1934 pcs.	92 ֏ × from 50 pcs. — 81 ֏
1N60G, Transistor N-MOSFET 600V 1A [SOT-223] 5-7 days, 2231 pcs. Brand: UMW Structure: n-channel Maximum drain-source voltage Usi, V: 600 Maximum drain-source current at 25 C Isi max..A: 1 Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 8.5 ohm/0.5A, 10V Slope of characteristic, S: 0.5 Housing: SOT-223	quick view	5-7 days, 2231 pcs.	49 ֏ × from 50 pcs. — 42 ֏
1N60L, Transistor N-MOSFET 600V 1A [TO-252] 5-7 days, 2400 pcs. Brand: UMW Structure: n-channel Maximum drain-source voltage Usi, V: 600 Maximum drain-source current at 25 C Isi max..A: 1 Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 8.5 ohm/0.5A, 10V Slope of characteristic, S: 0.5 Housing: TO-252/DPAK	quick view	5-7 days, 2400 pcs.	60 ֏ × from 50 pcs. — 53 ֏
1N65G, Transistor N-MOSFET 650V 1A [SOT-223] 5-7 days, 2372 pcs. Brand: UMW Structure: n-channel Maximum drain-source voltage Usi, V: 650 Maximum drain-source current at 25 C Isi max..A: 1 Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 8.5 ohm/0.5A, 10V Slope of characteristic, S: 0.5 Housing: SOT-223	quick view	5-7 days, 2372 pcs.	55 ֏ × from 50 pcs. — 49 ֏
1N65L, Transistor N-MOSFET 650V 1A [TO-252] 5-7 days, 2476 pcs. Brand: UMW Structure: n-channel Maximum drain-source voltage Usi, V: 650 Maximum drain-source current at 25 C Isi max..A: 1 Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 8.5 ohm/0.5A, 10V Slope of characteristic, S: 0.5 Housing: TO-252/DPAK	quick view	5-7 days, 2476 pcs.	59 ֏ × from 50 pcs. — 51 ֏

Field effect transistors are semiconductor devices through which flows of electric charge carriers flow. These flows are regulated by a transverse electric field created by a voltage applied between drain and gate or source and gate (drain and source are outer layers of semiconductors, gate is inner).

The principle of operation of field-effect transistors is based on the movement of the main carriers of an electric charge of one type (electrons or holes), in contrast to bipolar transistors, which have two types of charge carriers.

You can receive an order at our office and pick-up point in Yerevan. Delivery of goods is carried out throughout Armenia by courier and Haypost.
Order delivery to Yerevan, Gyumri, Vanadzor and more than 40 cities and towns of Armenia.

Products from the group «Field effect transistors (FETs, MOSFETs)» you can buy wholesale and retail.

Field effect transistors (FETs, MOSFETs)

LLC CHIP AND DIP