Assemblies of field effect transistors P-channel + P-channel

28 of over 1000
Order by: RecommendBestsellersLow-pricedHigh-pricedQuantity
Brand
reset
Structure
reset
Maximum drain-source voltage Usi, V
reset
Maximum drain-source current at 25 C Isi max..A
reset
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on)
reset
Maximum power dissipation Psi max..W
reset
Slope of characteristic, S
reset
Housing
reset
In stock
Yerevan
Price, ֏
Min. Price
Max. Price
IRF5810TRPBF, Transistor, HEXFET, 2P-channel 20V 2.9A [TSOP-6]
Brand: IR
Structure: 2P channels
Maximum drain-source voltage Usi, V: 20
Maximum drain-source current at 25 C Isi max..A: 2.9
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.09 Ohm / 2.9A, 4.5V
Maximum power dissipation Psi max..W: 0.96
Slope of characteristic, S: 5.4
Housing: TSOP-6/TSOT-23-6
quick view
158 ֏
99 ֏
×
from 100 pcs. — 84 ֏
IRF7342TRPBF, 2P-CH 55V 3.4A Transistor [SOIC-8]
Brand: Infineon
Structure: 2P channels
Maximum drain-source voltage Usi, V: 55
Maximum drain-source current at 25 C Isi max..A: 3.4
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.105 Ohm / 3.4A, 10V
Maximum power dissipation Psi max..W: 2
Slope of characteristic, S: 3.3
Housing: SOIC-8
quick view
730 ֏
438 ֏
×
from 25 pcs. — 421 ֏
AO4805, P-MOSFET Transistor 30V 9A 2W [SOP-8]
12 days, 2075 pcs.
Brand: UMW
Structure: 2P channels
Maximum drain-source voltage Usi, V: 30
Maximum drain-source current at 25 C Isi max..A: 8
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.012 Ohm/8A, 10V
Maximum power dissipation Psi max..W: 2
Slope of characteristic, S: 21
Housing: SOIC-8
quick view
12 days,
2075 pcs.
98 ֏ ×
from 50 pcs. — 90 ֏
AO4807, P-MOSFET Transistor 30V 6A 2W [SOP-8]
12 days, 1772 pcs.
Brand: UMW
Structure: 2P channels
Maximum drain-source voltage Usi, V: 30
Maximum drain-source current at 25 C Isi max..A: 6
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.019 Ohm/6A, 10V
Maximum power dissipation Psi max..W: 2
Slope of characteristic, S: 13
Housing: SOIC-8
quick view
12 days,
1772 pcs.
61 ֏ ×
from 50 pcs. — 56 ֏
APM4953, Transistor 2P-MOSFET 30V 5.3A 2W [SOP-8]
12 days, 3765 pcs.
Brand: UMW
Structure: 2P channels
Maximum drain-source voltage Usi, V: 30
Maximum drain-source current at 25 C Isi max..A: 5.3
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.038ohm/5.3A/10V
Maximum power dissipation Psi max..W: 2
Slope of characteristic, S: 11
Housing: SOP-8
quick view
12 days,
3765 pcs.
54 ֏ ×
from 100 pcs. — 48 ֏
IRF7304TR, Transistor 2P-MOSFET 20V 4.3A 2W [SOP-8]
12 days, 2628 pcs.
Brand: UMW
Structure: 2P channels
Maximum drain-source voltage Usi, V: 20
Maximum drain-source current at 25 C Isi max..A: 4.7
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.09 ohm/2.2A, 4.5V
Maximum power dissipation Psi max..W: 2
Slope of characteristic, S: 4
Housing: SOIC-8
quick view
12 days,
2628 pcs.
122 ֏ ×
from 50 pcs. — 111 ֏
IRF7316TR, Transistor 2P-MOSFET 30V 4.9A 2W [SOP-8]
12 days, 2187 pcs.
Brand: UMW
Structure: 2P channels
Maximum drain-source voltage Usi, V: 30
Maximum drain-source current at 25 C Isi max..A: 4.9
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.06 Ohm/4.9A, 10V
Maximum power dissipation Psi max..W: 2
Slope of characteristic, S: 7.7
Housing: SOIC-8
quick view
12 days,
2187 pcs.
122 ֏ ×
from 50 pcs. — 111 ֏
IRF7328TR, Transistor 2P-MOSFET 30V 8A 2W [SOP-8]
12 days, 2113 pcs.
Brand: UMW
Structure: 2P channels
Maximum drain-source voltage Usi, V: 30
Maximum drain-source current at 25 C Isi max..A: 8
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.021 Ohm/8A, 10V
Maximum power dissipation Psi max..W: 2
Slope of characteristic, S: 12
Housing: SOIC-8
quick view
12 days,
2113 pcs.
98 ֏ ×
from 50 pcs. — 90 ֏
IRF7342TR, Transistor 2P-MOSFET 55V 3.4A 2W [SOP-8]
12 days, 3864 pcs.
Brand: UMW
Structure: 2P channels
Maximum drain-source voltage Usi, V: 55
Maximum drain-source current at 25 C Isi max..A: 3.4
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.105 Ohm / 3.4A, 10V
Maximum power dissipation Psi max..W: 2
Slope of characteristic, S: 3.3
Housing: SOIC-8
quick view
12 days,
3864 pcs.
147 ֏ ×
from 50 pcs. — 132 ֏
FDS4935A, Transistor 2P-MOSFET 30V 8A [SOP-8]
12 days, 6369 pcs.
Brand: TECH PUBLIC
Structure: 2P channels
Maximum drain-source voltage Usi, V: 30
Maximum drain-source current at 25 C Isi max..A: 8
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.018 ohm/8A/10V
Maximum power dissipation Psi max..W: 3
Housing: SOP-8
quick view
12 days,
6369 pcs.
190 ֏ ×
from 100 pcs. — 177 ֏
IRF7104TRPBF, Transistor 2P-MOSFET 20V 2.3A [SOIC-8]
Brand: Infineon
Structure: 2P channels
Maximum drain-source voltage Usi, V: 20
Maximum drain-source current at 25 C Isi max..A: 2.3
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.25 ohm/1A, 10V
Maximum power dissipation Psi max..W: 2
Slope of characteristic, S: 2.5
Housing: SOIC-8
quick view
540 ֏
294 ֏
×
from 25 pcs. — 281 ֏
IRF7304TRPBF, Transistor HEXFET, 2P-channel, 20V, 4.3A, 0.090Ohm [SO-8]
Brand: Infineon
Structure: 2P channels
Maximum drain-source voltage Usi, V: 20
Maximum drain-source current at 25 C Isi max..A: 4.7
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.09 ohm/2.2A, 4.5V
Maximum power dissipation Psi max..W: 1.4
Slope of characteristic, S: 4
Housing: SOIC-8
quick view
590 ֏
409 ֏
×
from 25 pcs. — 392 ֏
IRF7306TRPBF, Transistor, 2P-channel 30V 3.6A 0.10Ohm [SO-8]
Brand: Infineon
Structure: 2P channels
Maximum drain-source voltage Usi, V: 30
Maximum drain-source current at 25 C Isi max..A: 4
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.1 ohm/1.8A, 10V
Maximum power dissipation Psi max..W: 2
Slope of characteristic, S: 2.5
Housing: SOIC-8
quick view
670 ֏
361 ֏
×
from 5 pcs. — 309 ֏
IRF7314TRPBF, Transistor, HEXFET, 2P-channel, 20V, 5.3A [SOIC-8]
Brand: Infineon
Structure: 2P channels
Maximum drain-source voltage Usi, V: 20
Maximum drain-source current at 25 C Isi max..A: 5.3
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.058 ohm/2.9A, 4.5V
Maximum power dissipation Psi max..W: 2
Slope of characteristic, S: 5.9
Housing: SOIC-8
quick view
730 ֏
376 ֏
×
from 25 pcs. — 361 ֏
IRF7316TRPBF, Transistor, HEXFET, 2P-channel, 30V, 4.9A [SOIC-8]
Brand: Infineon
Structure: 2P channels
Maximum drain-source voltage Usi, V: 30
Maximum drain-source current at 25 C Isi max..A: 4.9
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.058 ohm/4.9A, 10V
Maximum power dissipation Psi max..W: 2
Slope of characteristic, S: 7.7
Housing: SOIC-8
quick view
730 ֏
396 ֏
×
from 25 pcs. — 379 ֏
IRF7324TRPBF, Transistor 2P-MOSFET 20V 9A [SOIC-8]
Brand: Infineon
Structure: 2P channels
Maximum drain-source voltage Usi, V: 20
Maximum drain-source current at 25 C Isi max..A: 9
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.018 ohm/9A, 4.5V
Maximum power dissipation Psi max..W: 2
Slope of characteristic, S: 19
Housing: SOIC-8
quick view
420 ֏ ×
from 50 pcs. — 392 ֏
IRF7324TRPBF-VB, 2P-channel 20V 8.9A TrenchFET Transistor [SOIC-8]
12 days, 6807 pcs.
Brand: VBsemi
Structure: 2P channels
Maximum drain-source voltage Usi, V: 20
Maximum drain-source current at 25 C Isi max..A: 8.9
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.018 ohm/8.9A, 4.5V
Maximum power dissipation Psi max..W: 2
Slope of characteristic, S: 26
Housing: SOIC-8
quick view
12 days,
6807 pcs.
449 ֏
237 ֏
×
from 100 pcs. — 216 ֏
IRF7328TRPBF, Transistor, HEXFET, 2P-channel 30V 8.0A [SOIC-8]
Brand: Infineon
Structure: 2P channels
Maximum drain-source voltage Usi, V: 30
Maximum drain-source current at 25 C Isi max..A: 8
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.021 Ohm/8A, 10V
Maximum power dissipation Psi max..W: 2
Slope of characteristic, S: 12
Housing: SOIC-8
quick view
1 040 ֏
610 ֏
×
from 25 pcs. — 580 ֏
IRF7329TRPBF, Transistor HEXFET 2P-channel 12V 9.2A [SOIC-8]
Brand: Infineon
Structure: 2P channels
Maximum drain-source voltage Usi, V: 12
Maximum drain-source current at 25 C Isi max..A: 9.2
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.017 ohm/9.2A, 4.5V
Maximum power dissipation Psi max..W: 2
Slope of characteristic, S: 25
Housing: SOIC-8
quick view
482 ֏ ×
from 25 pcs. — 459 ֏
IRF9358TRPBF, Transistor, 2P-channel 30V 9.2A [SO-8]
Brand: Infineon
Structure: 2P channels
Maximum drain-source voltage Usi, V: 30
Maximum drain-source current at 25 C Isi max..A: 9.2
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.0163 Ohm/9.2A, 10V
Maximum power dissipation Psi max..W: 2
Slope of characteristic, S: 23
Housing: SOIC-8
quick view
520 ֏ ×
from 25 pcs. — 494 ֏
Page
  • 1
  • 2
Products by page
  • 20
  • 40
  • 60