Assemblies of field effect transistors N-channel + P-channel

42 of over 1000
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Structure
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Maximum drain-source voltage Usi, V
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Maximum drain-source current at 25 C Isi max..A
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Channel resistance in open state Rsi incl. (Max) at Id, Rds (on)
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Maximum power dissipation Psi max..W
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Slope of characteristic, S
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Housing
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AO4606, Transistor, N-channel / P-channel, 30V, 6.9 / 6A, 2W, 0.028Ohm / 0.035Ohm [SO-8]
Brand: Alpha & Omega
Structure: N / P channels
Maximum drain-source voltage Usi, V: 30
Maximum drain-source current at 25 C Isi max..A: 6.9/6
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.03 Ohm / 6A, 10V / 0.028 Ohm / 6.5A, 10V
Maximum power dissipation Psi max..W: 2
Slope of characteristic, S: 15/18
Housing: SOIC-8
quick view
540 ֏
328 ֏
×
from 25 pcs. — 312 ֏
AP4511GM, Transistor, N + P-channel, 35V, 7 / -6.1A, 25 / 40mOhm [SO-8]
238 pcs.
Brand: Advanced Power
Structure: N / P channels
Maximum drain-source voltage Usi, V: 35
Maximum drain-source current at 25 C Isi max..A: 7/6.1
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.025 Ohm / 7A, 10V / 0.04 Ohm / 6.1A, 10V
Maximum power dissipation Psi max..W: 2
Slope of characteristic, S: 9/9
Housing: SOIC-8
quick view
238 pcs.
590 ֏
328 ֏
×
from 10 pcs. — 301 ֏
AP4525GEH, Transistor, N + P-channel, 40V, 15 / -12A, 28 / 42mOhm [TO-252-4L]
620 pcs.
Brand: Advanced Power
Structure: N / P channels
Maximum drain-source voltage Usi, V: 40
Maximum drain-source current at 25 C Isi max..A: 15/12
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.028 Ohm / 15A, 10V / 0.042 Ohm / 12A, 10V
Maximum power dissipation Psi max..W: 10.4
Slope of characteristic, S: 6/5
Housing: DPAK-5(4 Leads+Tab)
quick view
620 pcs.
730 ֏
361 ֏
×
from 15 pcs. — 332 ֏
IRF7343TRPBF, N + P 55V 3.4A Transistor [SOIC-8]
Brand: Infineon
Structure: N / P channels
Maximum drain-source voltage Usi, V: 55
Maximum drain-source current at 25 C Isi max..A: 4.7/3.4
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.05 Ohm / 4.7A, 10V / 0.105 Ohm / 3.4A, 10V
Maximum power dissipation Psi max..W: 2
Slope of characteristic, S: 7.9
Housing: SOIC-8
quick view
730 ֏
495 ֏
×
from 25 pcs. — 476 ֏
IRF7105TR, N/P-MOSFET Transistor 25V 3.5A/2.3A 2W [SOP-8]
9 days, 2265 pcs.
Brand: UMW
Structure: N / P channels
Maximum drain-source voltage Usi, V: 25
Maximum drain-source current at 25 C Isi max..A: 3.5/2.3
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.1/0.25 Ohm/1A, 10V
Maximum power dissipation Psi max..W: 2
Slope of characteristic, S: 4.3/3.1
Housing: SOIC-8
quick view
9 days,
2265 pcs.
94 ֏ ×
from 50 pcs. — 86 ֏
IRF7307TR, N/P-MOSFET Transistor 20V 5.2A/4.3A 2W [SOP-8]
9 days, 6394 pcs.
Brand: UMW
Structure: N / P channels
Maximum drain-source voltage Usi, V: 20
Maximum drain-source current at 25 C Isi max..A: 5.7/4.7
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.053/0.1 Ohm/2.6A, 4.5V
Maximum power dissipation Psi max..W: 2
Slope of characteristic, S: 8.3/4
Housing: SOIC-8
quick view
9 days,
6394 pcs.
71 ֏ ×
from 50 pcs. — 63 ֏
IRF7309TR, N/P-MOSFET Transistor 30V 4A/3A 1.4W [SOP-8]
9 days, 4357 pcs.
Brand: UMW
Structure: N / P channels
Maximum drain-source voltage Usi, V: 30
Maximum drain-source current at 25 C Isi max..A: 4.7/3.5
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.05/0.1 Ohm/2.4A, 10V
Maximum power dissipation Psi max..W: 1.4
Slope of characteristic, S: 5.2/2.5
Housing: SOIC-8
quick view
9 days,
4357 pcs.
127 ֏ ×
from 50 pcs. — 115 ֏
IRF7319TR, N/P-MOSFET Transistor 30V 6.5A/4.9A 2W [SOP-8]
9 days, 4448 pcs.
Brand: UMW
Structure: N / P channels
Maximum drain-source voltage Usi, V: 30
Maximum drain-source current at 25 C Isi max..A: 6.5/4.9
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.031/0.06 Ohm/5.8A, 10V
Maximum power dissipation Psi max..W: 2
Slope of characteristic, S: 14/7.7
Housing: SOIC-8
quick view
9 days,
4448 pcs.
127 ֏ ×
from 50 pcs. — 115 ֏
IRF7343TR, Transistor N/P-MOSFET 55V 3.7A/4.3A 2W [SOP-8]
9 days, 4886 pcs.
Brand: UMW
Structure: N / P channels
Maximum drain-source voltage Usi, V: 55
Maximum drain-source current at 25 C Isi max..A: 4.7/3.4
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.065/0.09 Ohm/4.7A, 10V
Maximum power dissipation Psi max..W: 2
Slope of characteristic, S: 7.9/3.3
Housing: SOIC-8
quick view
9 days,
4886 pcs.
109 ֏ ×
from 50 pcs. — 98 ֏
IRF7389TR, N/P-MOSFET Transistor 30V 7.3A/5.3A 2.5W [SOP-8]
9 days, 2093 pcs.
Brand: UMW
Structure: N / P channels
Maximum drain-source voltage Usi, V: 30
Maximum drain-source current at 25 C Isi max..A: 7.3/5.3
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.029/0.058 Ohm/5.8A, 10V
Maximum power dissipation Psi max..W: 2.5
Slope of characteristic, S: 14/7.7
Housing: SOIC-8
quick view
9 days,
2093 pcs.
118 ֏ ×
from 50 pcs. — 106 ֏
AF4502CSLA, MOSFET Transistor P/N Channels 30V (D-S) [SOP-8]
9 days, 298 pcs.
Brand: Anachip
Structure: N / P channels
Maximum drain-source voltage Usi, V: 30
Maximum drain-source current at 25 C Isi max..A: 10/8.5
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.0135 ohm/10A, 10V/0.019 ohm/8.5A, 10V
Maximum power dissipation Psi max..W: 2.1
Slope of characteristic, S: 40/31
Housing: SOP-8
quick view
9 days,
298 pcs.
910 ֏
540 ֏
×
from 25 pcs. — 445 ֏
AO4600, N-channel / P-channel transistor, 30V, 6.9 / 5A, 2W, 0.027 / 0.049Ohm [SO-8]
Brand: Alpha & Omega
Structure: N / P channels
Maximum drain-source voltage Usi, V: 30
Maximum drain-source current at 25 C Isi max..A: 6.9/5
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.027 ohm at 6.9A, 10V / 0.049 ohm / 5A, 10V
Maximum power dissipation Psi max..W: 2
Slope of characteristic, S: 16/11
Housing: SOIC-8
quick view
730 ֏
465 ֏
×
from 25 pcs. — 441 ֏
AOP605, MOSFET N / P-CH 7.5A / 6.6A 30V [DIP-8]
Brand: Alpha & Omega
Structure: N / P channels
Maximum drain-source voltage Usi, V: 30
Maximum drain-source current at 25 C Isi max..A: 7.5/6.6
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.028 Ohm / 7.5A, 10V / 0.035 Ohm / 6.6A, 10V
Maximum power dissipation Psi max..W: 2.5
Slope of characteristic, S: 16
Housing: DIP-8
quick view
1 040 ֏
650 ֏
×
from 25 pcs. — 630 ֏
AP4511GH, Transistor, N + P channel, 35V, + 15 / -12A, 30/48 mOhm [TO-252-4L]
9 days, 108 pcs.
Brand: Advanced Power
Structure: N / P channels
Maximum drain-source voltage Usi, V: 35
Maximum drain-source current at 25 C Isi max..A: 15/12
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.03 Ohm / 15A, 10V / 0.048 Ohm / 12A, 10V
Maximum power dissipation Psi max..W: 10.4
Slope of characteristic, S: 13/10
Housing: DPAK-5(4 Leads+Tab)
quick view
9 days,
108 pcs.
1 100 ֏
670 ֏
×
from 15 pcs. — 640 ֏
AP4525GEM, Field Effect Transistor Assembly, N + P Channel, 40 V, -5 A / 6 A, 2 W, [SOP-8]
9 days, 367 pcs.
Brand: Advanced Power
Structure: N / P channels
Maximum drain-source voltage Usi, V: 40
Maximum drain-source current at 25 C Isi max..A: 6/5
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.028 Ohm / 6A, 10V / 0.042 Ohm / 5A, 10V
Maximum power dissipation Psi max..W: 2
Slope of characteristic, S: 6/5
Housing: SOIC-8
quick view
9 days,
367 pcs.
730 ֏
449 ֏
×
from 15 pcs. — 435 ֏
FDC6420C-VB, TrenchFET Transistor N/P-channels 20V 5.5/-3.2A [TSOP-6]
9 days, 11682 pcs.
Brand: VBsemi
Structure: N / P channels
Maximum drain-source voltage Usi, V: 20
Maximum drain-source current at 25 C Isi max..A: 5.5/3.4
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.022 ohm/2.5A, 10V/0.055 ohm/1.8A, 10V
Maximum power dissipation Psi max..W: 1.15
Slope of characteristic, S: 4.3/2
Housing: TSOP-6
quick view
9 days,
11682 pcs.
146 ֏
106 ֏
×
from 50 pcs. — 98 ֏
FDD8424H-VB, N/P-MOSFET Transistor 40V 50A [TO-252-4L]
9 days, 226 pcs.
Brand: VBsemi
Structure: N / P channels
Maximum drain-source voltage Usi, V: 40
Maximum drain-source current at 25 C Isi max..A: 50
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.014 ohm/38A, 10V
Maximum power dissipation Psi max..W: 108
Slope of characteristic, S: 40/18
Housing: DPAK(4 Leads+Tab)
quick view
9 days,
226 pcs.
268 ֏ ×
from 100 pcs. — 245 ֏
FDS4559, Transistor N/P-MOSFET 60V 6A/5A [SOP-8]
9 days, 2366 pcs.
Brand: TECH PUBLIC
Structure: N / P channels
Maximum drain-source voltage Usi, V: 60
Maximum drain-source current at 25 C Isi max..A: 6/5
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.03 Ohm/6A, 10V
Maximum power dissipation Psi max..W: 2
Slope of characteristic, S: 15
Housing: SOIC-8
quick view
9 days,
2366 pcs.
153 ֏ ×
from 100 pcs. — 140 ֏
FDS4897C, Transistor, PowerTrench, N + P-channel, 40V 6.2A / -4.4A [SO-8]
Brand: ON Semiconductor
Structure: N / P channels
Maximum drain-source voltage Usi, V: 40
Maximum drain-source current at 25 C Isi max..A: 6.2/4.4
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.029 Ohm / 6.2A, 10V / 0.046 at 4.4A, 10V
Maximum power dissipation Psi max..W: 2
Slope of characteristic, S: 21/12
Housing: SOIC-8
quick view
2 070 ֏
860 ֏
×
from 25 pcs. — 700 ֏
FDS8958A, Transistor, PowerTrench, N + P-channel, 30V 7 / -5A [SO-8]
Brand: ON Semiconductor
Structure: N / P channels
Maximum drain-source voltage Usi, V: 30
Maximum drain-source current at 25 C Isi max..A: 7/5
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on): 0.028 Ohm / 7A, 10V / 0.052 Ohm / 5A, 10V
Maximum power dissipation Psi max..W: 2
Slope of characteristic, S: 11/19
Housing: SOIC-8
quick view
1 280 ֏
800 ֏
×
from 25 pcs. — 780 ֏
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