IRF7304TRPBF, Transistor HEXFET, 2P-channel, 20V, 4.3A, 0.090Ohm [SO-8]

Photo 1/4 IRF7304TRPBF, Transistor HEXFET, 2P-channel, 20V, 4.3A, 0.090Ohm [SO-8]
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see technical documentation
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425 ֏
from 25 pcs.408 ֏
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SKU: 9000539510

Description

Description The IRF7304TRPBF field effect transistor from the manufacturer INFINEON is a high—quality component for modern electronic devices. With SMD mounting and a compact SO8 housing, this N-MOSFET transistor is designed for surface mounting on printed circuit boards. With a drain current of 4.3A and a drain-source voltage of 20 V, it provides reliable operation in a wide range of applications. The power of the device is 2 watts, which makes it suitable for many electronic circuits. The use of IRF7304TRPBF guarantees the stability and long service life of your projects. Specifications
Category Transistor
Type field
View N-MOSFET
Mounting SMD
Drain current, A 4.3
Drain-source voltage, V 20
Power, W 2
Body SO8

Technical parameters

Structure 2P channels
Maximum drain-source voltage Usi, V 20
Maximum drain-source current at 25 C Isi max..A 4.7
Maximum gate-source voltage Uzi max., V ±20
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on) 0.09 ohm/2.2A, 4.5V
Maximum power dissipation Psi max..W 1.4
Slope of characteristic, S 4
Housing SOIC-8
Weight, g 0.15

Technical documentation

Datasheet IRF7304TRPBF
pdf, 231 КБ