2SK932-23-TB-E, JFET NCH J-FET
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Описание
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Технические параметры
| Current - Drain (Idss) @ Vds (Vgs=0) | 10mA @ 5V |
| Current Drain (Id) - Max | 50mA |
| Drain to Source Voltage (Vdss) | 15V |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Manufacturer | ON Semiconductor |
| Mounting Type | Surface Mount |
| Operating Temperature | 150В°C(TJ) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Packaging | Cut Tape(CT) |
| Part Status | Active |
| Power - Max | 200mW |
| Series | - |
| Supplier Device Package | 3-CP |
| Voltage - Cutoff (VGS off) @ Id | 200mV @ 100ВµA |
| Channel Type | N |
| Configuration | Single |
| Drain Gate On-Capacitance | 10pF |
| Idss Drain-Source Cut-off Current | 10 to 17mA |
| Maximum Drain Gate Voltage | -15V |
| Maximum Drain Source Voltage | 15 V |
| Maximum Operating Temperature | +150 °C |
| Package Type | CP |
| Pin Count | 3 |
| Source Gate On-Capacitance | 3pF |
| Transistor Configuration | Single |
| Width | 1.5mm |
| Вес, г | 0.008 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet 2SK932-23-TB-E
pdf, 1044 КБ
