CSD19535KTTT
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
5 600 ֏
от 10 шт. —
4 210 ֏
от 50 шт. —
3 820 ֏
от 100 шт. —
3 060 ֏
Добавить в корзину 1 шт.
на сумму 5 600 ֏
Описание
Discrete Semiconductor Products\Transistors - FETs, MOSFETs - Single
Описание Транзистор: N-MOSFET, полевой, 100В, 200А, 300Вт, D2PAK Характеристики | Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Base Product Number | CSD19535 -> |
| Current - Continuous Drain (Id) @ 25В°C | 200A (Ta) |
| Drain to Source Voltage (Vdss) | 100V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| ECCN | EAR99 |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 98nC @ 10V |
| HTSUS | 8541.29.0095 |
| Input Capacitance (Ciss) (Max) @ Vds | 7930pF @ 50V |
| Manufacturer Product Page | http://www.ti.com/general/docs/suppproductinfo.tsp |
| Moisture Sensitivity Level (MSL) | 2 (1 Year) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55В°C ~ 175В°C (TJ) |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| Package / Case | TO-263-4, DВІPak (3 Leads + Tab), TO-263AA |
| Power Dissipation (Max) | 300W (Tc) |
| Rds On (Max) @ Id, Vgs | 3.4mOhm @ 100A, 10V |
| REACH Status | REACH Affected |
| RoHS Status | ROHS3 Compliant |
| Series | NexFETв„ў -> |
| Supplier Device Package | DDPAK/TO-263-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | В±20V |
| Vgs(th) (Max) @ Id | 3.4V @ 250ВµA |
| Brand: | Texas Instruments |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 200 |
| Fall Time: | 15 ns |
| Forward Transconductance - Min: | 301 S |
| Id - Continuous Drain Current: | 200 A |
| Manufacturer: | Texas Instruments |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Moisture Sensitive: | Yes |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-263-3 |
| Pd - Power Dissipation: | 300 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 75 nC |
| Rds On - Drain-Source Resistance: | 3.4 mOhms |
| Rise Time: | 18 ns |
| Series: | CSD19535KTT |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | NexFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 21 ns |
| Typical Turn-On Delay Time: | 9 ns |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.2 V |
