CSD19505KCS, Транзистор: N-MOSFET, полевой, 80В, 150А, 300Вт, TO220-3

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2 820 ֏

от 3 шт. — 2 400 ֏

от 10 шт. — 2 060 ֏

Добавить в корзину 1 шт. на сумму 2 820 ֏

Номенклатурный номер: 8017150021

Описание Транзистор: N-MOSFET, полевой, 80В, 150А, 300Вт, TO220-3 Характеристики

Brand:	Texas Instruments
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	50
Fall Time:	6 ns
Forward Transconductance - Min:	262 S
Id - Continuous Drain Current:	100 A
Manufacturer:	Texas Instruments
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Number of Channels:	1 Channel
Package / Case:	TO-220-3
Packaging:	Tube
Pd - Power Dissipation:	300 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	76 nC
Rds On - Drain-Source Resistance:	3.1 mOhms
Rise Time:	16 ns
Series:	CSD19505KCS
Subcategory:	MOSFETs
Technology:	Si
Tradename:	NexFET
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	2.6 V
Automotive	No
Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current - (A)	150
Maximum Drain Source Resistance - (mOhm)	3.1@10V
Maximum Drain Source Voltage - (V)	80
Maximum Gate Source Voltage - (V)	?20
Maximum Gate Threshold Voltage - (V)	3.2
Maximum Power Dissipation - (mW)	300000
Military	No
Number of Elements per Chip	1
Operating Temperature - (?C)	-55~175
Packaging	Tube
Pin Count	3
Process Technology	NexFET
Supplier Package	TO-220
Typical Gate Charge @ 10V - (nC)	76
Typical Gate Charge @ Vgs - (nC)	76@10V
Typical Input Capacitance @ Vds - (pF)	6090@40V
Вес, г	3.652