JFE150DBVT, JFET Ultra-low-noise, low-gate-current audio N-channel JFET 5-SOT-23 -40 to 125

JFE150DBVT, JFET Ultra-low-noise, low-gate-current audio N-channel JFET 5-SOT-23 -40 to 125
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см. техническую документацию
3 830 ֏
от 10 шт.3 030 ֏
от 25 шт.2 700 ֏
от 100 шт.2 270 ֏
Добавить в корзину 1 шт. на сумму 3 830 ֏
Номенклатурный номер: 8021277425
Бренд: Texas Instruments

Описание

Semiconductors\Discrete Semiconductors\Transistors\JFET
JFE150 Audio N-Channel JFET

Texas Instruments JFE150 Audio N-Channel JFET is a Burr-Brown™ discrete JFET built using Texas Instruments" modern, high-performance, analog bipolar process. The JFE150 features performance not previously available in older discrete JFET technologies. The JFE150 offers the maximum possible noise-to-power efficiency and flexibility, where the quiescent current can be set by the user and yields excellent noise performance for currents from 50µA to 20mA. When biased at 5mA, the device yields 0.8nV/ Hz of input-referred noise, giving ultra-low noise performance with extremely high input impedance (> 1TΩ). The JFE150 also features integrated diodes connected to separate clamp nodes to protect without the addition of high leakage, nonlinear external diodes.

Технические параметры

Brand: Texas Instruments
Configuration: Single
Factory Pack Quantity: Factory Pack Quantity: 250
Forward Transconductance - Min: 3 mS
Gate-Source Cutoff Voltage: -1.2 V
Id - Continuous Drain Current: 50 mA
Manufacturer: Texas Instruments
Maximum Operating Temperature: +125 C
Minimum Operating Temperature: -40 C
Mounting Style: SMD/SMT
Package / Case: SOT-23-5
Packaging: Reel, Cut Tape
Product Category: JFET
Product Type: JFETs
Series: JFE150
Subcategory: Transistors
Technology: Si
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 40 V
Vgs - Gate-Source Breakdown Voltage: -40 V
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