IXTP60N10T, Транзистор: N-MOSFET, полевой, 100В, 60А, 176Вт, TO220-3, 59нс
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Описание
Описание Транзистор: N-MOSFET, полевой, 100В, 60А, 176Вт, TO220-3, 59нс Характеристики
| Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Brand: | IXYS |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 50 |
| Fall Time: | 37 ns |
| Forward Transconductance - Min: | 42 S |
| Id - Continuous Drain Current: | 60 A |
| Manufacturer: | IXYS |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-220-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 176 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 49 nC |
| Rds On - Drain-Source Resistance: | 18 mOhms |
| Rise Time: | 40 ns |
| Series: | IXTP60N10 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | HiPerFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 43 ns |
| Typical Turn-On Delay Time: | 27 ns |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
| Вес, г | 2.8 |
Техническая документация
Datasheet IXTA60N10T
pdf, 288 КБ
