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RFN10NS6STL

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480 шт., срок 8-10 недель

840 ֏

Кратность заказа 30 шт.

от 60 шт. — 570 ֏

от 120 шт. — 520 ֏

Добавить в корзину 30 шт. на сумму 25 200 ֏

Альтернативные предложения1

Номенклатурный номер: 8022782558

Бренд: Rohm

Описание

Fast Recovery Diodes

ROHM Semiconductor Fast Recovery Diodes improve the efficiency of the switching power supply. The Fast Recovery Diodes reduce switching loss, have a recommended storage temperature of +20°C to +30°C, and humidity of 40% to 60% (RH). The highly efficient fast recovery diodes offer low noise and minimal loss. ROHM Semiconductor Fast Recovery Diodes are excellent for free-wheel PFCs and IGBTs and are Standard or AEC-Q101 Qualified.

Технические параметры

Brand:	ROHM Semiconductor
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	1000
If - Forward Current:	10 A
Ir - Reverse Current:	50 nA
Manufacturer:	ROHM Semiconductor
Max Surge Current:	100 A
Maximum Operating Temperature:	+150 C
Mounting Style:	SMD/SMT
Package / Case:	TO-263S-3
Part # Aliases:	RFN10NS6S
Product Category:	Diodes-General Purpose, Power, Switching
Product Type:	Diodes-General Purpose, Power, Switching
Recovery Time:	30 ns
Series:	RFN10NS6S
Subcategory:	Diodes & Rectifiers
Vf - Forward Voltage:	1.25 V
Diode Configuration	Single
Diode Technology	Silicon Junction
Maximum Continuous Forward Current	10A
Maximum Forward Voltage Drop	1.55V
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	LPDS, TO-263S
Peak Non-Repetitive Forward Surge Current	100A
Peak Reverse Recovery Time	50ns
Peak Reverse Repetitive Voltage	600V
Pin Count	2+Tab
Rectifier Type	Fast Recovery
Вес, г	1