Automotive	No
Channel Mode	Enhancement
Channel Type	P
Configuration	Single Quad Drain
ECCN (US)	EAR99
EU RoHS	Compliant
Lead Shape	Gull-wing
Maximum Continuous Drain Current (A)	4.1
Maximum Drain Source Resistance (mOhm)	74 10V
Maximum Drain Source Voltage (V)	30
Maximum Gate Source Leakage Current (nA)	100
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	3
Maximum IDSS (uA)	1
Maximum Operating Temperature (°C)	150
Maximum Power Dissipation (mW)	2000
Minimum Operating Temperature (°C)	-55
Mounting	Surface Mount
Number of Elements per Chip	1
Packaging	Tape and Reel
Part Status	Active
PCB changed	6
Pin Count	6
PPAP	No
Process Technology	TrenchFET
Product Category	Power MOSFET
Standard Package Name	SOP
Supplier Package	TSOP
Typical Fall Time (ns)	12
Typical Gate Charge @ 10V (nC)	10
Typical Gate Charge @ Vgs (nC)	10 10V\|5.1 4.5V
Typical Input Capacitance @ Vds (pF)	450 15V
Typical Rise Time (ns)	80
Typical Turn-Off Delay Time (ns)	20
Typical Turn-On Delay Time (ns)	40
Maximum Continuous Drain Current	5.1 A
Maximum Drain Source Resistance	13 mΩ
Maximum Drain Source Voltage	30 V
Maximum Gate Source Voltage	±20 V
Maximum Gate Threshold Voltage	-3V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	3 W
Minimum Gate Threshold Voltage	-1V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Package Type	TSOP-6
Transistor Configuration	Single
Typical Gate Charge @ Vgs	10 nC @ 10 V
Width	1.7mm
Вес, г	0.1

SI3457CDV-T1-GE3, Транзистор P-MOSFET, полевой, -30В, -4,1А, 2Вт, TSOP6