MJB44H11G, Транзистор
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Описание
TRANSISTOR, BIPOL, NPN, 80V, TO-263-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:50MHz; Power Dissipation Pd:50W; DC Collector Current:10A; DC Current Gain hFE:40hFE; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018)
Технические параметры
| Brand | ON Semiconductor |
| Collector- Base Voltage VCBO | 5 V |
| Collector- Emitter Voltage VCEO Max | 80 V |
| Collector-Emitter Saturation Voltage | 1 V |
| Configuration | Single |
| Continuous Collector Current | 10 A |
| DC Collector/Base Gain hfe Min | 60 |
| Emitter- Base Voltage VEBO | 5 V |
| Factory Pack Quantity | 800 |
| Gain Bandwidth Product fT | 50 MHz |
| Height | 4.83 mm(Max) |
| Length | 10.29 mm(Max) |
| Manufacturer | ON Semiconductor |
| Maximum DC Collector Current | 10 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Package / Case | TO-263-3 |
| Packaging | Reel |
| Pd - Power Dissipation | 50 W |
| Product Category | Bipolar Transistors-BJT |
| RoHS | Details |
| Series | MJB44H11 |
| Transistor Polarity | NPN |
| Width | 9.65 mm(Max) |
| Вес, г | 1.2 |
Техническая документация
Документация
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