50A02CH-TL-E, Trans GP BJT PNP 50V 0.5A 700mW 3-Pin CPH T/R

Фото 1/4 50A02CH-TL-E, Trans GP BJT PNP 50V 0.5A 700mW 3-Pin CPH T/R
Изображения служат только для ознакомления,
см. техническую документацию
119 ֏
Кратность заказа 3000 шт.
Добавить в корзину 3000 шт. на сумму 357 000 ֏
Номенклатурный номер: 8001347283

Технические параметры

EU RoHS Compliant
ECCN (US) EAR99
Part Status Active
HTS 8541.21.00.95
PCB changed 3
Package Height 0.9
Mounting Surface Mount
Lead Shape Gull-wing
Package Width 1.6
Package Length 2.9
Type PNP
Product Category Bipolar Small Signal
Configuration Single
Number of Elements per Chip 1
Maximum Collector Base Voltage (V) 50
Maximum Collector-Emitter Voltage (V) 50
Maximum Emitter Base Voltage (V) 5
Maximum Base Emitter Saturation Voltage (V) 1.2@10mA@100mA
Maximum Collector-Emitter Saturation Voltage (V) 0.12@10mA@100mA
Maximum DC Collector Current (A) 0.5
Minimum DC Current Gain 200@10mA@2V
Maximum Power Dissipation (mW) 700
Maximum Transition Frequency (MHz) 690(Typ)
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Packaging Tape and Reel
Automotive No
Supplier Package CPH
Pin Count 3
Standard Package Name SOT
Military No
Brand: onsemi
Collector- Base Voltage VCBO: 50 V
Collector- Emitter Voltage VCEO Max: 50 V
Collector-Emitter Saturation Voltage: 60 mV
Configuration: Single
Continuous Collector Current: -500 mA
DC Current Gain hFE Max: 500
Emitter- Base Voltage VEBO: 5 V
Factory Pack Quantity: Factory Pack Quantity: 3000
Gain Bandwidth Product fT: 690 MHz
Manufacturer: onsemi
Maximum DC Collector Current: 500 mA
Maximum Operating Temperature: +150 C
Mounting Style: SMD/SMT
Package / Case: SC-59-3
Pd - Power Dissipation: 700 mW
Product Category: Bipolar Transistors-BJT
Product Type: BJTs-Bipolar Transistors
Series: 50A02CH
Subcategory: Transistors
Technology: Si
Transistor Polarity: PNP
Maximum Collector Base Voltage -50 V
Maximum Collector Emitter Voltage -50 V
Maximum DC Collector Current -500 mA
Maximum Emitter Base Voltage -5 V
Maximum Operating Frequency 690 MHz
Maximum Operating Temperature +150 °C
Maximum Power Dissipation 700 mW
Mounting Type Surface Mount
Package Type CPH
Transistor Configuration Single
Transistor Type PNP
Вес, г 1

Техническая документация

Datasheet
pdf, 1680 КБ
Datasheet
pdf, 303 КБ
Datasheet 50A02CH-TL-E
pdf, 301 КБ
Datasheet 50A02CH-TL-E
pdf, 304 КБ