FF400R06KE3HOSA1
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см. техническую документацию
см. техническую документацию
345 000 ֏
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336 000 ֏
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326 000 ֏
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Описание
Электроэлемент
IGBT, MODULE, N-CH, 600V, 500A; Transistor Polarity:N Channel; DC Collector Current:500A; Collector Emitter Saturation Voltage Vce(on):1.45V; Power Dissipation Pd:1.25kW; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:Module; No. of Pins:-; Operating Temperature Max:150°C; Product Range:62mm C-Series; SVHC:No SVHC (27-Jun-2018)
Технические параметры
| Configuration | Half Bridge |
| Current - Collector (Ic) (Max) | 500A |
| Current - Collector Cutoff (Max) | 5mA |
| IGBT Type | Trench Field Stop |
| Input | Standard |
| Manufacturer | Infineon Technologies |
| Mounting Type | Chassis Mount |
| NTC Thermistor | No |
| Operating Temperature | -40В°C ~ 150В°C(TJ) |
| Package / Case | Module |
| Part Status | Active |
| Power - Max | 1250W |
| Series | C |
| Supplier Device Package | Module |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 400A |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Automotive | No |
| Channel Type | N |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Maximum Collector-Emitter Voltage (V) | 600 |
| Maximum Continuous Collector Current (A) | 500 |
| Maximum Gate Emitter Leakage Current (uA) | 0.4 |
| Maximum Gate Emitter Voltage (V) | ±20 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 1250 |
| Minimum Operating Temperature (°C) | -40 |
| Mounting | Screw |
| Packaging | Tray |
| PCB changed | 7 |
| Pin Count | 7 |
| PPAP | No |
| Supplier Package | 62MM-1 |
| Typical Collector Emitter Saturation Voltage (V) | 1.45 |
| Вес, г | 0.34 |
Техническая документация
Datasheet
pdf, 430 КБ
