IKP20N60H3
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Описание
Электроэлемент
IGBT Transistors 600V HI SPEED SW IGBT
Технические параметры
Brand | Infineon Technologies |
Collector- Emitter Voltage VCEO Max | 600 V |
Collector-Emitter Saturation Voltage | 1.95 V |
Configuration | Single |
Continuous Collector Current at 25 C | 40 A |
Continuous Collector Current Ic Max | 40 A |
Factory Pack Quantity | 500 |
Gate-Emitter Leakage Current | 100 nA |
Manufacturer | Infineon |
Maximum Gate Emitter Voltage | 20 V |
Maximum Operating Temperature | +175 C |
Minimum Operating Temperature | -40 C |
Mounting Style | Through Hole |
Package / Case | TO-220-3 FP |
Packaging | Tube |
Part # Aliases | IKP20N60H3XK IKP20N60H3XKSA1 SP000852236 |
Pd - Power Dissipation | 170 W |
Product Category | IGBT Transistors |
RoHS | Details |
Series | IKP20N60 |
Technology | Si |
Unit Weight | 0.08113 oz |
Brand: | Infineon Technologies |
Collector- Emitter Voltage VCEO Max: | 600 V |
Collector-Emitter Saturation Voltage: | 1.95 V |
Configuration: | Single |
Continuous Collector Current at 25 C: | 40 A |
Factory Pack Quantity: | 500 |
Gate-Emitter Leakage Current: | 100 nA |
Manufacturer: | Infineon |
Maximum Gate Emitter Voltage: | -20 V, 20 V |
Maximum Operating Temperature: | +175 C |
Minimum Operating Temperature: | -40 C |
Mounting Style: | Through Hole |
Package/Case: | TO-220-3 |
Packaging: | Tube |
Part # Aliases: | IKP2N6H3XK SP000852236 IKP20N60H3XKSA1 |
Pd - Power Dissipation: | 170 W |
Product Category: | IGBT Transistors |
Product Type: | IGBT Transistors |
Subcategory: | IGBTs |
Technology: | Si |
Вес, г | 2.3 |
Техническая документация
Datasheet
pdf, 2224 КБ