TN0106N3-G, Транзистор МОП n-канальный, 60В, 2А, 1Вт, TO92, Канал обогащенный

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Номенклатурный номер: 8002679794

Semiconductors\Transistors\Unipolar transistors\N channel transistors

N-канал 60 В 350 мА (Tj) 1 Вт (Tc) сквозное отверстие TO-92-3

Case	TO92
Drain current	0.35A
Drain-source voltage	60V
Gate-source voltage	±20V
Kind of channel	enhanced
Kind of package	bulk
Manufacturer	MICROCHIP TECHNOLOGY
Mounting	THT
On-state resistance	3Ω
Polarisation	unipolar
Power dissipation	1W
Pulsed drain current	2A
Type of transistor	N-MOSFET
Base Product Number	TN0106 ->
Current - Continuous Drain (Id) @ 25В°C	350mA (Tj)
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
ECCN	EAR99
FET Type	N-Channel
HTSUS	8541.29.0095
Input Capacitance (Ciss) (Max) @ Vds	60pF @ 25V
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Through Hole
Operating Temperature	-55В°C ~ 150В°C (TJ)
Package	Bulk
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
PCN Packaging	http://www.microchip.com/mymicrochip/NotificationD
Power Dissipation (Max)	1W (Tc)
Rds On (Max) @ Id, Vgs	3Ohm @ 500mA, 10V
REACH Status	REACH Unaffected
RoHS Status	ROHS3 Compliant
Supplier Device Package	TO-92-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	В±20V
Vgs(th) (Max) @ Id	2V @ 500ВµA
Вес, г	0.22